GaN功率放大器输出功率下降失效分析  

Failure Analysis of GaN Power Amplifier Output Power Decrease

作　　者：张茗川 戈硕 袁雪泉 钱婷 章勇佳 季子路 ZHANG Mingchuan;GE Shuo;YUAN Xuequan;QIAN Ting;ZHANG Yongjia;JI Zilu(China Electronics Technology Group Corporation No.55 Research Institute,Nanjing210016,China)

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《电子与封装》2025年第2期68-73,共6页Electronics & Packaging

基　　金：江苏省重点研发计划(BE2022070-2)。

摘　　要：GaN管芯是微波功率放大器的核心器件,其热性能很大程度上决定了功率放大器的电性能。针对某一型号功率放大器在直流老化后出现输出功率下降的现象,利用红外热像、声学扫描、能谱分析等分析方法对失效功率放大器开展了分析研究。结果表明,放大器管芯背金金属层之间发生明显分层,导致器件热阻增大,老炼时管芯结温超过安全工作区,从而使得放大器输出功率下降。GaN dies are the core components in microwave power amplifiers,and their thermal performance largely determines the electrical performance of power amplifiers.Aiming at the phenomenon of output power decrease of a type of power amplifier after DC aging,infrared thermal imaging,acoustic scanning and energy spectrum analysis are used to analyze and study the failed power amplifier.The results show that there is a significant peeling between the metal layers on the back side metal of the die,leading to an increase in the thermal resistance.During aging,the junction temperature of the chip exceeds the safe operating zone,resulting in a decrease in amplifier output power.

关 键 词：功率下降 背金 热阻 

分 类 号：TN406[电子电信—微电子学与固体电子学] TN454