面向开关时序与驱动电压自主协同调控的SiC/Si混合开关驱动电路  

SiC/Si Hybrid Switch Drive Circuit with Autonomous and Coordinated Control of Switching Sequences and Driving Voltages

作　　者：肖标 郭祺[1] 涂春鸣[1] 肖凡[1] 龙柳 Xiao Biao;Guo Qi;Tu Chunming;Xiao Fan;Long Liu(National Electric Power Conversion and Control Engineering Technology Research Center Hunan University,Changsha 410082 China)

机构地区：[1]国家电能变换与控制工程技术研究中心(湖南大学),长沙410082

出　　处：《电工技术学报》2025年第4期1117-1128,共12页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金资助项目(52130704)。

摘　　要：由SiC金属氧化物半导体场效应晶体管(MOSFET)与Si绝缘栅双极型晶体管(IGBT)并联组成的SiC/Si混合开关(SiC/Si HyS)因兼具低损耗与低成本的优势而备受关注。然而,现有HyS研究主要关注于如何改变内部开关时序这一可调参数来优化其损耗或可靠性,调控参数单一且尚未兼顾损耗和可靠性的整体优化,考虑多调控参数的HyS集成驱动电路更是极为缺乏。首先,该文在充分挖掘开关时序、驱动电压等多调控参数对HyS特性影响的基础上,提出一种面向开关时序与驱动电压自主协同调控的HyS驱动电路软硬件架构设计方法,所提驱动电路不仅能为HyS提供由不同开关时序与驱动电压组成的三种开关模式,而且能根据负载电流水平实现开关时序与驱动电压的自主协同调控。其次,搭建基于所提驱动电路的HyS型单相逆变器,验证了所提驱动电路的有效性。最后,从逆变器效率、驱动电路功率损耗以及成本三个方面分析了所提驱动电路的优势。The SiC/Si hybrid switch(SiC/Si HyS)is composed of a SiC metal oxide semiconductor field transistor(MOSFET)and Si insulated gate bipolar transistor(IGBT)in parallel,attracting much attention due to its low loss and low cost.However,the existing HyS research mainly focuses on changing the switching sequence to optimize its loss or reliability,which has the disadvantage of single control parameters.Besides,the HyS integrated drive circuit with multiple control parameters is lacking.Therefore,this paper proposes a SiC/Si HyS drive circuit with autonomous and coordinated control of switching sequences and driving voltages.Three switching patterns of different switching sequences and driving voltages for HyS can be provided,and the autonomous coordinated control of switching sequences and driving voltages is realized according to the load current level.Firstly,the effects of the switching sequence and driving voltage on the loss and electrical stress of SiC/Si HyS are analyzed.Then,a SiC/Si HyS switching strategy is proposed with coordinated control of the switching sequence and driving voltage.Secondly,the basic structure of the proposed drive circuit is introduced,which is mainly composed of a current sensor,field programmable gate array(FPGA),driving chip,auxiliary triodes,power module,and coupling capacitor.The switching principle and operation logic of the switching sequence and driving voltage are introduced.A HyS-type single-phase inverter based on the proposed drive circuit is built,and the effectiveness of the proposed drive circuit is verified.Finally,the advantages of the proposed drive circuit are analyzed in terms of inverter efficiency,drive circuit power loss,and drive circuit cost.The following conclusions can be drawn.(1)A SiC/Si HyS single-phase inverter is built to test the proposed drive circuit.The experimental results show that the proposed drive circuit can actively switch the switching sequence and driving voltage of SiC/Si HyS under different output power of the inverter.(2)The advantages of t

关 键 词：SiC/Si混合开关 开关时序 驱动电压 协同控制 驱动电路 

分 类 号：TM13[电气工程—电工理论与新技术]