基于Monte Carlo方法的三维邻近效应校正  

Three-dimensional Proximity Effect Correction Based on the Monte Carlo Method

作　　者：张誉腾 刘珠明 梁锡辉 王铠尧 李全同 王其瑞 段飞 陈德龙 Zhang Yuteng;Liu Zhuming;Liang Xihui;Wang Kaiyao;Li Quantong;Wang Qirui;Duan Fei;Chen Delong(School of Electronic and Information Engineering,Wuyi University,Jiangmen,Guangdong 529000,China;Institute of Semiconductors,Guangdong Academy of Sciences,Guangzhou 510651,China)

机构地区：[1]五邑大学电子与信息工程学院,广东江门529000 [2]广东省科学院半导体研究所,广州510651

出　　处：《机电工程技术》2025年第2期54-59,共6页Mechanical & Electrical Engineering Technology

基　　金：广东省重点领域研发计划项目(2020B0101320002)。

摘　　要：针对电子束光刻中由于电子束散射引起的邻近效应带来的光刻图形精度变差问题,传统的二维邻近效应校正方法在处理精细和三维结构时未能有效应对,尤其是在图形的边缘和角点处。提出了一种基于剂量校正的新型的三维邻近效应校正方法。运用Monte Carlo方法和单元格去除显影法分别模拟三维能量密度分布和显影过程。对三维能量密度分布进行反卷积获得图形边缘的剂量分布,基于显影速率分布获得除图形边缘外的区域的剂量分布,探讨抗蚀剂三维形貌结构变化及其受剂量分布的影响,并对长100 nm、宽50 nm的矩形图案进行仿真,校正后所得图形X-Z和Y-Z剖面的侧壁宽度偏差分别为1.9%和1.2%。仿真结果表明,相对于未校正、采用二维邻近效应校正方法,基于所提三维邻近效应校正方法的图形X-Y剖面形貌精度得到改善,示例中图形角点处受邻近效应影响带来的面积偏差分别减小34.01%和25.21%,在提高电子束光刻图形精度方面有较好效果。In response to the accuracy degradation of lithographic patterns caused by electron scattering-induced proximity effects in electron beam lithography,traditional two-dimensional proximity effect correction methods have failed to effectively address the issue,particularly at the edges and corners of patterns.A novel three-dimensional proximity effect correction approach based on dose correction is introduces.The Monte Carlo method and the cell removal developing process are employed to simulate the three-dimensional energy density distribution and the developing process,respectively.Deconvolution is applied to the three-dimensional energy density distribution to obtain the dose distribution at the pattern edges,while the dose distribution in areas excluding the pattern edges is obtained based on the development rate distribution.The study examines the changes in the three-dimensional morphology of the resist and its response to the dose distribution.Simulations are conducted on rectangular patterns with dimensions of 100 nm in length and 50 nm in width.After correction,the deviations in sidewall widths of the X-Z and Y-Z profiles are reduced to 1.9%and 1.2%,respectively.Simulation results demonstrate that compared to uncorrected and two-dimensional proximity effect corrected patterns,the morphological accuracy of the X-Y profile of patterns corrected using the three-dimensional proximity effect correction method presented is improved.Specifically,the area deviations caused by proximity effects at the corners of the example patterns are reduced by 34.01%and 25.21%,respectively,indicating significant improvements in the accuracy of electron beam lithography patterns.

关 键 词：电子束光刻 邻近效应 三维校正 剂量分布 Monte Carlo模拟 

分 类 号：TN305.7[电子电信—物理电子学]