4 GHz~8 GHz宽带高增益250 W GaN功率放大器设计  

4 GHz~8 GHz Wideband High-gain 250 W GaN Power Amplifier

作　　者：景少红 苏鹏 黄锦文 徐祖银 JING Shaohong;SU Peng;HUANG Jinwen;XU Zuyin(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《微波学报》2025年第1期6-9,共4页Journal of Microwaves

摘　　要：研制了一款基于0.25μm氮化镓高电子迁移率晶体管工艺的4 GHz~8 GHz宽带高增益功率放大器。通过对模型管的S参数和I-V曲线进行测试并进行拟合,最终得到氮化镓管芯的大信号等效电路模型,并利用氮化镓管芯的大信号等效电路模型进行精确的仿真设计。为实现高增益,该放大器内部设计有两级晶体管。输入匹配和级间匹配电路采用碳化硅集成功率器件工艺制作,减小匹配电路尺寸。输入合成网络和末级输出匹配电路采用低损耗陶瓷片介质加工。放大器采用4个12 mm管芯进行合成后实现250 W的功率输出,每个12 mm管芯由2个1.2 mm管芯推动。最终功率放大器在4 GHz~8 GHz频率范围内,在32 V电压条件下,实测脉冲输出功率大于250 W,功率附加效率大于38%,放大器功率增益大于18 dB。功率放大器尺寸为30.8 mm×27.4 mm×5.0 mm。A 4 GHz~8 GHz wideband high-gain power amplifier based on 0.25μm gallium nitride high electron mobility transistor technology is presented.The large signal gallium nitride transistor equivalent circuit model is obtained by testing and fitting the S parameters and I-V curve of the model tube,and the large signal equivalent circuit model of GaN tube core is used for accurate simulation design.The power amplifier utilizes two-stage transistor for high-gain design.The input and inter-stage circuits are fabricated by silicon carbide integrated power device process to reduce the matching circuit size.The input synthesis network and the final stage output matching circuit are fabricated by low-loss ceramic.The power amplifier use two 1.2 mm gallium nitride transistors to drive a 12 mm gallium nitride transistor,then combine four 12 mm gallium nitride transistors for 250 W.The measured pulse output power of the power amplifier is great than 250 W in the frequency range of 4 GHz~8 GHz,under the condition of 32 V voltage.The power additional efficiency is great than 38%,and the power gain of the amplifier is great than 18 dB.The power amplifier size is 30.8 mm×27.4 mm×5.0 mm.

关 键 词：氮化镓 宽带 高增益 大功率 

分 类 号：TN722.75[电子电信—电路与系统]