基于GaN芯片的宽带170 GHz~260 GHz放大器模块  

A Broadband 170 GHz~260 GHz Amplifier Module Based on GaN Chip

作　　者：刘广儒 张勇[1] 朱华利 延波[1] LIU Guangru;ZHANG Yong;ZHU Huali;YAN Bo(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学电子科学与工程学院,成都611731

出　　处：《微波学报》2025年第1期46-50,共5页Journal of Microwaves

基　　金：微波毫米波单片集成和模块电路重点实验室开放基金项目(61428032204)。

摘　　要：本文设计了一款基于氮化镓芯片的170 GHz~260 GHz固态放大器模块。该模块采用波导-共面波导过渡结构,通过在标准矩形波导中插入楔形波导膜片来实现高紧凑的低损耗过渡。仿真结果表明,该过渡在整个波导频带内回波损耗优于20 dB,插入损耗小于0.12 dB。此外还在输入输出法兰处引入扼流槽结构,以实现对模块级联可能存在的信号泄露进行抑制。实际测试结果表明,该放大器模块在170 GHz~260 GHz频率范围内的小信号增益超过7.6 dB,输出功率均大于4 mW,并且该模块在213 GHz处实现了最大12.8 mW的功率输出,PAE为8.7%。In this paper,a 170 GHz~260 GHz solid-state amplifier module based on gallium nitride chip is designed.A waveguide-to-coplanar waveguide transition structure is used by the module where a wedge-shaped waveguide iris is inserted into a standard rectangular waveguide to achieve a highly compact and low-loss transition.The simulation results show that the transition has an average return loss of better than 20 dB over the entire waveguide band,with an insertion loss is less than 0.12 dB.Furthermore,a choke groove structure is introduced at the input and output flanges to suppress signal leakage that may occur during module cascading.The actual test results show that the amplifier module achieves a small-signal gain of more than 7.6 dB over the frequency range of 170 GHz~260 GHz,with output powers greater than 4 mW at all frequencies.Furthermore,the module achieves a maximum output power of 12.8 mW at 213 GHz,with a PAE of 8.7%.

关 键 词：氮化镓 放大器模块 波导-共面波导过渡 宽带 

分 类 号：TN722.75[电子电信—电路与系统]