热电子应力对氮化镓器件特性的影响研究  

Research on the Influence of Thermionic Stress on the Characteristics of GaN Devices

作　　者：韩滔 聂之君 马帅帅 郭晗 周若臣 孔笑荷 沈郁博 么鹏 张源芷 HAN Tao;NIE Zhijun;MA Shuaishuai;GUO Han;ZHOU Ruochen;KONG Xiaohe;SHEN Yubo;YAO Peng;ZHANG Yuanzhi(Defense Technology Research and Test Center,China Aerospace Science and Industry Corporation Limited,Beijing 100039)

机构地区：[1]航天科工防御技术研究试验中心,北京100039

出　　处：《舰船电子工程》2024年第12期153-156,190,共5页Ship Electronic Engineering

摘　　要：随着氮化镓器件应用场合、领域不断增多,氮化镓器件的可靠性问题成为使用过程中最重要的关注点,论文采用应力试验的方法对氮化镓器件在热电子应力条件下的退化情况进行了试验分析,分析了氮化镓器件退化原因,用于设计生产阶段的可靠性保障。With the increasing using of GaN devices,the reliability of GaN devices has become the most important concern during use.In this paper,the degradation of GaN devices under thermal-electronic stress conditions is tested and analyzed by means of stress test,and the degradation reasons of GaN devices are analyzed for reliability assurance in the design and production stage.

关 键 词：热电子应力 氮化镓器件 退化 

分 类 号：TN386[电子电信—物理电子学]