基于Si_(3)N_(4)陶瓷层的SiC功率模块封装结构优化  

Optimization of SiC Power Module Package Structure based on Si_(3)N_(4) Ceramic Layer

作　　者：陈姣 郑亮[1,2] CHEN Jiao;ZHEN Liang(Laboratory of Intelligent Equipment and Electromechanical Power Integration Technology,Xihua University,Chengdu 610039,Sichuan,China;School of Mechanical Engineering,Xihua University,Chengdu 610039,Sichuan,China)

机构地区：[1]西华大学智能装备与机电功率集成技术实验室,四川成都610039 [2]西华大学机械工程学院,四川成都610039

出　　处：《机械研究与应用》2025年第1期52-55,60,共5页Mechanical Research & Application

摘　　要：在第三代宽禁带半导体中,Si_(3)N_(4)陶瓷因兼具高强度和高热导率而成为最具潜力的绝缘性散热基底材料。该文根据多准则决策法(考虑结温、热阻、热膨胀系数CTE不匹配等),采用热-应力耦合仿真探究不同焊层和基底材料的替换对模块与Si_(3)N_(4)陶瓷层组合热特性和可靠性的综合影响。结果表明,与Si_(3)N_(4)陶瓷层组合中热特性和可靠性结合效果最优的组合为纳米银焊层和CuW基底。然后采用温度循环仿真法验证优化后的模型,结果显示,优化后的模型的平均应力下降16.6%,平均第一主应变下降10.2%。此结论为Si_(3)N_(4)陶瓷基板与其它部件结合使用的可靠性评价提供一定的参考。Among the third-generation wide-band semiconductors,Si_(3)N_(4) ceramics have become the most promising insulating thermal dissipation substrate material due to its combination of high strength and high thermal conductivity.According to the multi-criteria decision-making method(junction temperature,thermal resistance,coefficient of thermal expansion(CTE)mismatch,etc.),thermal-stress coupling simulation is used to investigate the comprehensive effects of replacing different solder layers and substrate materials on the thermal characteristics and reliability of the module when combined with Si_(3)N_(4) ceramic layer.The results show that the optimal combination of nano-silver solder layer and CuW substrate is the one that combines with Si_(3)N_(4) ceramic layer with good thermal characteristics and reliability.Temperature cycling simulation is used to verify the optimized model,and the results show that the average stress of the optimized model is decreased by 16.6%,and the average first principal strain is reduced by 10.2%.This conclusion is a reference for the reliability evaluation of Si_(3)N_(4) ceramic substrate when it is used in combination with other components as a whole.

关 键 词：功率模块 Si_(3)N_(4)陶瓷层 温度循环 可靠性 

分 类 号：TN305.94[电子电信—物理电子学]