Gate-tunable positive and negative photoresponses based on a mixed-dimensional Ga_(2)O_(3)/WSe_(2) junction field-effect transistor for logic operation  

作　　者：ZIBIN HUANG WENHAI WANG SUJUAN WANG YANG CHEN HANZHE ZHANG LISHENG WANG HUIRU SUN YUAN PAN HONGYU CHEN XUN YANG FRANCIS CHI-CHUNG LING SHICHEN SU 

机构地区：[1]Institute of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China [2]College of Electrical Engineering,Hebei University of Architecture,Zhangjiakou 075000,China [3]State Key Laboratory of Optoelectronic Materials and Technologies,School of Physics,Sun Yat-sen University,Guangzhou 510275,China [4]Henan Key Laboratory of Diamond Optoelectronic Materials and Devices,Key Laboratory of Materials Physics,Ministry of Education,School of Physics and Laboratory of Zhongyuan Light,Zhengzhou University,Zhengzhou 450052,China [5]Department of Physics,The University of Hong Kong,Hong Kong 999077,China

出　　处：《Photonics Research》2024年第12期2804-2811,共8页光子学研究(英文版)

基　　金：National Natural Science Foundation of China(11974122,U22A2073);Science and Technology Planning Project of Guangdong Province(2022A0505050067);Open Research Project Programme of the Macao Centre for Research and Development in Advanced Materials(University of Macao)(MCRDAM-IAPME(UM)-2022-2024/ORP/XXX/2023);Scientific Research Innovation Project of Graduate School of South China Normal University.

摘　　要：Realization of positive and negative optical responses in a single device promises construction of multifunctional optoelectronic devices.This work demonstrates a Ga_(2)O_(3)∕WSe_(2) mixed-dimensional heterojunction junction fieldeffect transistor(JFET)with positive and negative photoresponse regulatory functions by gate voltage.The device achieves a remarkable negative responsivity exceeding 425 mA/W.Additionally,benefiting from Fowler-Nordheim tunneling(FNT)behavior,the mixed-dimensional JFET exhibited an excellent negative response performance with response and decay times of 50.1 ms and 53.9 ms and a high I OFF∕I ON ratio of 343 at V ds1 V and Vg5 V under 635 nm illumination.Additionally,the JFET’s negative photoresponse is sensitive to both gate voltage and light intensity,which can be used to realize NAND logic gate and optical communication functions.These results unveil the promising potential of mixed-dimensional optoelectronic devices for optical communication,and logic device technologies.

关 键 词：TRANSISTOR OPTOELECTRONIC TUNABLE 

分 类 号：TN386[电子电信—物理电子学]