用于提高GaN基电路振荡稳定性的驱动优化研究  

Research on Driving Optimization for Improving Oscillation Stability of GaN-based Circuits

作　　者：张楠 李艳[1] 赵方玮 ZHANG Nan;LI Yan;ZHAO Fangwei(School of Electrical Engineering,Beijing Jiaotong University,Beijing 100044,China)

机构地区：[1]北京交通大学电气工程学院,北京100044

出　　处：《电源学报》2025年第1期209-218,共10页Journal of Power Supply

基　　金：国家自然科学基金面上资助项目(51877007)。

摘　　要：相比传统的硅Si(silicon)器件,氮化镓GaN(gallium nitride)器件具有更低的寄生参数、更快的开关速度和更小的导通电阻,但也导致器件在开通过程中更容易发生持续振荡现象,带来电路的不稳定问题。为了抑制这种现象,建立常规驱动方式下桥式电路的负电导模型,分析电路的振荡稳定性,建立在常规驱动方式基础上增加优化方式的负电导模型,分别选择以改变关断电阻、增加磁珠为代表的串联阻尼和以RC(resistor-capacitance)阻尼器为代表的并联低阻抗的优化方式。通过此模型可以判断出驱动优化方式的加入对电路振荡稳定性产生的影响,并通过实验结果验证了加入优化方式前、后电路的振荡稳定性变化,为驱动回路选择合适的驱动优化方式提供了参考。Compared with the traditional silicon(Si)devices,the gallium nitride(GaN)devices have lower parasitic parameters,a faster switching speed and a smaller on-resistance,which will easily lead to the phenomenon of continuous oscillation during their switching-on process and further result in the circuit instability.Therefore,it is necessary to suppress this phenomenon in practical circuits.Under this background,a negative conductance model of a bridge circuit under the conventional driving scheme is established at first,and the oscillation stability of the circuit is analyzed.Then,by adding optimization to the conventional driving scheme,the corresponding negative conductance model is established.The optimization schemes of series damping represented by changing the resistance and adding ferrite beads and those of parallel low impedance represented by adding RC snubber are selected,respectively.With this model,the influence of adding the driving optimization schemes on the oscillation stability of the circuit can be identified,and the changes in the stability before and after the addition were verified by experimental results,providing a reference for the driving circuit to select its appropriate driving optimization scheme.

关 键 词：GAN 负电导模型 振荡 稳定性 驱动优化 

分 类 号：TM46[电气工程—电器]