基于激光技术的硬脆材料SiC表面抛光的研究进展  

Research Progress on Polishing Hard and Brittle Silicon-Carbide Material Surfaces Using Laser Technology

作　　者：王子睿 樊成 黄冬梅 王永光[1] 赵栋[1] 倪自丰 Wang Zirui;Fan Cheng;Huang Dongmei;Wang Yongguang;Zhao Dong;Ni Zifeng(School of Mechanical and Electric Engineering,Soochow University,Suzhou 215021,Jiangsu,China;Suzhou Jiangjin Automation Technology Co.,Ltd.,Suzhou 215100,Jiangsu,China;School of Mechanical Engineering,Jiangnan University,Wuxi 214122,Jiangsu,China)

机构地区：[1]苏州大学机电工程学院,江苏苏州215021 [2]苏州江锦自动化科技有限公司,江苏苏州215100 [3]江南大学机械工程学院,江苏无锡214122

出　　处：《激光与光电子学进展》2024年第23期15-27,共13页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(52375458,51775360,51501121,U1533101);江苏省研究生科研与实践创新计划项目(KYCX23_3236)。

摘　　要：随着半导体产业的快速发展,对以碳化硅(SiC)为代表的第三代宽禁带功率半导体材料的抛光质量和抛光效率均提出了日益严苛的要求,因此探索更高效的表面制造技术以满足行业内的迫切需求具有极为重要的意义。本文对比了SiC材料的常用抛光技术,概述了激光抛光和不同种类的激光表面改性辅助抛光等技术的作用机理。并且,从SiC材料高硬脆和强化学惰性的材料特性出发,综述了近年来SiC材料基于激光的表面抛光技术的研究进展。基于激光技术的材料表面抛光方法能够实现SiC表面材料高效去除,且具有不易产生亚表面损伤和便于实现产业自动化等优势。总结目前半导体行业内SiC材料表面高效、无损的超精密抛光技术的两大极具前景的发展方向,包括了激光技术与化学机械抛光(CMP)技术的复合,以及多能场复合的激光抛光和激光辅助CMP技术。最后,展望了激光抛光和激光辅助CMP技术及其作用机理在未来的研究发展方向。本文为SiC等难加工的硬脆半导体材料的高效率和高质量抛光提供了切实可行的新思路和一定的参考,具有明确的指导意义。With the rapid advancement of the semiconductor industry,there is a growing demand for improved polishing quality and efficiency for third-generation comprehensive band-gap power semiconductor materials,particularly silicon carbide(SiC).As a result,it is crucial to explore efficient surface manufacturing technologies to meet the urgent needs of the industry.This study compares common polishing techniques for SiC materials and summarizes the mechanisms of laser polishing and various laser surface modification-assisted polishing methods.Additionally,recent research progress in laserbased surface polishing technology for SiC materials is reviewed,focusing on the challenges posed by the material’s high hardness,brittleness,and chemical inertness.Laser-based surface polishing offers several advantages,including efficiently removing SiC surface materials,avoiding subsurface damage,and facilitating industrial automation.Two promising development directions are summarized for highly efficient and nondestructive ultraprecision polishing technology for SiC materials in the current semiconductor industry.One of the development directions involves combining laser technology with chemical mechanical polishing(CMP).The other focuses on integrating multi-energy fields with laser polishing or laser-assisted CMP technology.Finally,the potential development of laser polishing and laser-assisted CMP technology,along with the underlying mechanisms,is discussed.This study provides a novel perspective and valuable reference for the highly effective and high-quality polishing of third-generation comprehensive band-gap power semiconductor materials,such as SiC,with substantial implications for the industry.

关 键 词：激光抛光 SIC 材料去除速率 表面粗糙度 

分 类 号：TG147[一般工业技术—材料科学与工程]