基于脉冲激光沉积的非晶IGZO场效应晶体管的性能优化  

Performance Optimization of Amorphous IGZO Field⁃effect Transistors Fabricated Using Pulsed Laser Deposition

作　　者：梅佳旺 李调阳 MEI Jiawang;LI Tiaoyang(College of Advanced Manufacturing,Fuzhou University,Quanzhou,Fujian,362251,CHN)

机构地区：[1]福州大学先进制造学院,福建泉州362251

出　　处：《固体电子学研究与进展》2025年第1期82-86,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(62204042);福建省自然科学基金资助项目(2021J05118)。

摘　　要：采用脉冲激光沉积技术生长出非晶氧化铟镓锌(Indium-gallium-zinc-oxide,IGZO)半导体沟道,并基于微纳加工工艺制备出高性能背栅场效应晶体管,系统研究了沉积温度、氧气压强、后退火对器件电学特性的影响。结果表明,最佳沉积温度为200℃,且随着氧气压强的增加,IGZO场效应晶体管的阈值电压单调正移,当氧气压强为15 Pa时,器件阈值电压大于0 V,晶体管从耗尽型转变到增强型,同时电流开关比提升了5个数量级达到10~7,提取得到的场效应迁移率为11.8 cm^(2)/(V·s)。通过X射线光电子能谱表征分析,阈值电压正移主要得益于氧气压强的增加降低了IGZO薄膜中的氧空位浓度(即载流子浓度)。此外,为进一步优化器件的电学特性,在250℃温度及Ar∶O_(2)氛围中进行了2 h退火处理,IGZO场效应晶体管在阈值电压保持不变的同时,器件迁移率提升至16.1 cm^(2)/(V·s),接触电阻从0.026 5 kΩ·mm降低至0.003 kΩ·mm。Amorphous indium-gallium-zinc-oxide(IGZO)semiconductor channels were deposited used pulsed laser deposition technique and subsequently fabricated into high-performance back-gated field-effect transistors(FETs)employed micro-nanofabrication processes.The influence of deposition temperature,oxygen pressure,and post-annealing on the electrical characteristics of IGZO FETs was systematically investigated.The optimal deposition temperature is identified as 200℃.Moreover,as ox-ygen pressure increases,the threshold voltage of IGZO FETs exhibits a monotonic positive shift,reach-ing a threshold voltage greater than 0 V at an oxygen pressure of 15 Pa,transitioning the transistor from depletion-mode to enhancement-mode operation.Simultaneously,the on/off current ratio is boosted by 5 orders of magnitude,achieving 107,and the extracted field-effect mobility is measured at 11.8 cm^(2)/(V·s).X-ray photoelectron spectroscopy(XPS)characterization indicates that the positive threshold voltage shift is primarily attributed to the increased oxygen pressure,reducing the oxygen vacancy concen-tration(carrier density)within the IGZO thin film.Furthermore,to further optimize the electrical proper-ties of IGZO FETs,annealing at 250℃in an Ar∶O2 atmosphere for 2 hours is being performed.This treat-ment results in an enhancement of the device mobility to 16.1 cm^(2)/(V·s)and a decrease in the contact resis-tance from 0.0265 kΩ·mm to 0.003 kΩ·mm,while maintaining a consistent threshold voltage.

关 键 词：氧化铟镓锌 场效应晶体管 迁移率 脉冲激光沉积 

分 类 号：TN822[电子电信—信息与通信工程]