A bright future for micro-LED displays  

作　　者：Vineeth K.Bandari Oliver G.Schmidt 

机构地区：[1]Research Center for Materials,Architectures and Integration of Nanomembranes(MAIN),Chemnitz University of Technology,Chemnitz,Germany [2]Material Systems for Nanoelectronics,Chemnitz University of Technology,Chemnitz,Germany [3]International Institute for Intelligent Nanorobots and Nanosystems(IIINN),Fudan University,Shanghai,China

出　　处：《Light(Science & Applications)》2024年第12期2877-2879,共3页光(科学与应用)(英文版)

摘　　要：The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10^(7)nits and high-density microdisplays with up to 1080×780 pixels marks a true breakthrough in the field.This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth,sidewall passivation,efficient photon extraction,and elegant bonding technologies,and promises significant advantages for augmented and virtual reality devices,wearables,and next-generation consumer electronics.

关 键 词：BREAKTHROUGH EXCEEDING BONDING 

分 类 号：TN3[电子电信—物理电子学]