锑化物半导体材料及其分子束外延生长研究进展  

Research Progress of Antimonide Semiconductor Materials and Their Molecular Beam Epitaxy Growth

作　　者：胡德鹏 王红真 路云峰 贺训军 Hu Depeng;Wang Honghen;Lu Yunfeng;He Xunjun(School of Electrical and Electronic Engineering,Harbin University of Science and Technology,Harbin 150080,China;Suzhou Xinyue Semiconductor Co.,Ltd.,Suzhou 215137,China)

机构地区：[1]哈尔滨理工大学电气与电子工程学院,哈尔滨150080 [2]苏州信越半导体有限公司,江苏苏州215137

出　　处：《半导体技术》2025年第3期229-240,共12页Semiconductor Technology

基　　金：国家自然科学基金(62075052)。

摘　　要：锑化物半导体的带隙能量覆盖了整个红外区域,为开展材料的能带工程提供了很大的自由度和灵活性。分子束外延(MBE)是一种在超高真空环境下能够高度可控地生长高纯化合物薄膜材料的技术,在III-V族化合物半导体尤其是锑化物半导体材料生长中得到了广泛应用。通过对锑化物半导体材料的特性、实际应用的探讨,着重介绍了分子束外延技术在锑化物生长领域的最新研究进展。首先,阐述了二元、三元和四元锑化物半导体材料的物理特性;其次,总结了相关的红外探测器、激光器和热光伏电池等器件在低暗电流和高工作温度等研究方向的进展;最后,针对锑化物半导体的MBE生长工艺和过程中存在的问题,总结了一些切实可行的解决方案,并且展望了未来锑化物半导体材料分子束外延的发展趋势。The bandgap energy of antimonide semiconductors covers the entire infrared region,providing a great deal of freedom and flexibility to carry out energy band engineering of materials.Molecular beam epitaxy(MBE),a technique capable of highly controllable growth of high-purity compound thin-film materials in ultrahigh vacuum environment,has been widely used in the growth of I-V compound semiconductors,especially antimonide semiconductor materials.The latest research progress in the field of antimonide growth by MBE is emphatically introduced through the discussion of the characteristic and practical applications of antimonide semiconductor materials.Firstly,the physical characteristics of binary,ternary and quaternary antimonide semiconductor materials are expounded.Secondly,the research advancements of related devices such as infrared detectors,lasers and thermophotovoltaic cells in aspects like low dark current and high operating temperature are summarized.Finally,with respect to the MBE growth process of antimonide semiconductors and the existing problems,some feasible solutions are summed up,and the development trend of molecular beam epitaxy of antimonide semiconductor materials in the future is prospected.

关 键 词：锑化物 半导体 分子束外延(MBE) 能带结构 生长工艺 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054