Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact  

作　　者：Shuang Qiao Jihong Liu Chengdong Yao Ni Yang Fangyuan Zheng Wanqing Meng Yi Wan Philip C.Y.Chow Dong-Keun Ki Lijie Zhang Yumeng Shi Lain-Jong Li 

机构地区：[1]Hebei Key Laboratory of Optic-Electronic Information and Materials,College of Physics Science and Technology,Hebei University,071002,Baoding,China [2]Department of Mechanical Engineering,The University of Hong Kong,Hong Kong,China [3]Department of Physics and HK Institute of Quantum Science&Technology,The University of Hong Kong,Hong Kong,China [4]Key Laboratory of Carbon Materials of Zhejiang Province,College of Chemistry and Materials Engineering,Wenzhou University,Wenzhou,China [5]Key Laboratory of Luminescence and Optical Information,Ministry of Education,School of Physical Science and Engineering,Beijing Jiaotong University,100044,Beijing,China

出　　处：《Light(Science & Applications)》2025年第1期197-205,共9页光(科学与应用)(英文版)

基　　金：support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC(2022-0118);the Research Grant of the Council of Hong Kong(CRS_PolyU502/22 and T46-705/23-R);L.-J.L.&Y.W.acknowledge the support from the University of Hong Kong and the National Key R&D Project of China(2022YFB4400100);S.Q.acknowledges the financial support from Ministry of Science and Technology of China(P222020001);National Nature Science Foundation of China(62175058);Nature Science Foundation of Hebei Province(A2022201014);Hebei Province Optoelectronic Information Materials Laboratory Performance Subsidy Fund Project(22567634H);P.C.Y.C.acknowledges support from the Research Grant of the Council of Hong Kong(27200822);the National Nature Science Foundation of China(22222905).

摘　　要：Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect(BPVE)but with a low cell efficiency.Over the past few years,relatively larger BPVE coefficients have been reported for two-dimensional(2D)layers and stacks with asymmety-induced spontaneous polarization.Here,we report a crucial breakthrough in boosting the BPVE in 3R-MoS2 by adopting edge contact(EC)geometry using bismuth semimetal electrode.In clear contrast to the typically used top contact(TC)geometry,the EC metal which strongly adheres to the edges and the subtrates can induce a pronounced tensile strain to the 3R-MoS2,and the lateral contact geometry allows to completely access to in-plane polarization from underneath layers reachable by light,leading to>100 times of BPVE enhancement in photocurrent.We further design a 3R-MoS2/WSe2 heterojunction to demonstrate constructive coupling of BPVE with the conventional photovoltaic effect,indicating their potential in photodetectors and photovoltaic devices.

关 键 词：effect GEOMETRY BREAKTHROUGH 

分 类 号：O472[理学—半导体物理]