Lithium niobate electro-optical modulator based on ion-cut wafer scale heterogeneous bonding on patterned SOI wafers  

作　　者：ZHUOYUN LI YANG CHEN SHUXIAO WANG FAN XU QIANG XU JIANMIN ZHANG QIANNAN ZHU WENCHENG YUE XIN OU YAN CAI MINGBIN YU 

机构地区：[1]State Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Microelectronics,Shanghai University,Shanghai 201800,China [4]Shanghai IndustrialμTechnology Research Institute,Shanghai 201800,China [5]Shanghai Mingkun Semiconductor Co.,Ltd.,Shanghai 201800,China

出　　处：《Photonics Research》2025年第1期106-112,共7页光子学研究(英文版)

基　　金：China State Key Laboratory of Materials for Integrated Circuits(NKLJC-Z2023-A04);National Natural Science Foundation of China(62204250,61935003);National Key Research and Development Program of China(2021YFB2800303).

摘　　要：This paper presents the design,fabrication,and characterization of a high-performance heterogeneous silicon on insulator(SOI)/thin film lithium niobate(TFLN)electro-optical modulator based on wafer-scale direct bonding followed by ion-cut technology.The SOI wafer has been processed by an 8 inch standard fabrication line and cut into 6 inch for direct bonding with TFLN.The hybrid SOI/LN electro-optical modulator operated at the wavelength of 1.55μmis composed of couplers on the Si layer and aMach-Zehnder interferometer(MZI)structure on theLNlayer.The fabricated device exhibits a stable value of the product of half-wave voltage and length(V_(π)L)of around 2.9 V·cm.It shows a good low-frequency electro-optic response flatness and supports 96 Gbit/s data transmission for the NRZ format and 192 Gbit/s data transmission for the PAM-4 format.

关 键 词：MODULATOR SOI INTERFEROMETER 

分 类 号：TN761[电子电信—电路与系统]