磁控溅射法在有机衬底上制备SnO_2掺Sb透明导电膜  

Preparation of conducting transparent SnO_2: Sb films deposited on organic substrates by RF magnetron -sputting

作　　者：杨田林[1] 杨光德[1] 高绪团[1] 万云芳[1] 

机构地区：[1]山东理工大学物理系,山东淄博255091

出　　处：《半导体技术》2002年第12期64-67,共4页Semiconductor Technology

基　　金：山东省基金赞助课题(1997602)

摘　　要：采用射频磁控溅射法在有机柔性衬底上制备出了SnO2: Sb透明导电膜,讨论了薄膜的结构和光电性质对制备条件的依赖关系。制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构。对衬底适当地加热,当衬底温度为200℃时,在PI(聚酰亚胺)胶片上制备出了性能良好的薄膜,薄膜相应自由载流子霍耳迁移率的最大值为13.9cm2/V·s,载流子浓度为15.5×1019 cm-3,薄膜电阻率的最小值为3.7×10-3W·cm。在可见光范围内,样品的相对透过率为85%左右。Transparent conducting SnO2: Sb films were deposited on organic substrates by RFmagnetron-sputtering. The structural and photoelectric properties of the films dependence ofpreparation condition are discussed. Polycrystalline films still retained the rutile structure. Tansparentconducting SnO2:Sb films with good properties were deposited on PI substrate when substrates wereheated properly. At 200℃ substrates temperature, carrier concentration and Hall mobility of filmshave the maximum value of 15.5×1019 cm-3 and 13.9cm2/V·s respectively, as well as resistivity hasminor value of 3.7×10-3W·cm. The average transmittance reaches 85% in visible region.

关 键 词：磁控溅射法 制备 SNO2 Sb透明导电膜 

分 类 号：TN305[电子电信—物理电子学]