β相氧化镓p型导电研究进展  

Research Progress on p-Type Conduction of β Phase Gallium Oxide

作　　者：查显弧 万玉喜 张道华 ZHA Xianhu;WAN Yuxi;ZHANG Daohua(Shenzhen Pinghu Laboratory,Shenzhen 518111,China)

机构地区：[1]深圳平湖实验室,深圳518111

出　　处：《人工晶体学报》2025年第2期177-189,共13页Journal of Synthetic Crystals

基　　金：深圳平湖实验室项目(224120)。

摘　　要：β相氧化镓(β-Ga_(2)O_(3))具有超宽带隙、高击穿电场和容易制备等优势,是功率器件的理想半导体材料。但由于β-Ga_(2)O_(3)价带顶能级位置低、能带色散关系平坦,其p型掺杂目前仍具有挑战性,限制了p-n结及双极性晶体管的开发。利用尺寸效应、缺陷调控、非平衡动力学及固溶提升价带顶能级等方案是目前实现β-Ga_(2)O_(3)p型掺杂的主要策略。对于β-Ga_(2)O_(3)p-n同质结和异质结,提高晶体质量、减少界面缺陷态是优化器件性能的关键问题。本文针对β-Ga_(2)O_(3)的p型导电问题,系统阐述了β-Ga_(2)O_(3)电子结构,实验表征及理论计算掺杂能级方法,p型掺杂困难原因,以及改进p型掺杂的突破性研究进展。最后简单介绍了β-Ga_(2)O_(3)p-n同质结和异质结器件的相关工作。利用复合缺陷调控、非平衡动力学、固溶等方案,以及不同方案的协同实现体相β-Ga_(2)O_(3)的p型掺杂仍需要深入探索,p-n同质及异质结的器件性能需要进一步优化。βphase gallium oxide(β-Ga_(2)O_(3))is an ideal semiconductor material for power devices based on its ultra-wide bandgap,high breakdown electric field,and easy preparation.However,it is still challenging to realize p-type doping of the β-Ga_(2)O_(3)because of its relatively low energy of valence band maximum(VBM)and flat band dispersion near the VBM,which limits the development of p-n junctions and bipolar transistors.The main strategies for the p-type doping of β-Ga_(2)O_(3)in recent research are based on size effect,defect regulation,non-equilibrium dynamic process,and solid solution.For the β-Ga_(2)O_(3)p-n homojunction and heterojunction,improving crystal quality and reducing the interface defect states are the key issues for optimizing devices’performances.This paper focuses on the p-type conductivity problem of β-Ga_(2)O_(3),systematically reviews the electronic structure of β-Ga_(2)O_(3),the experimental characterization and theoretical calculation method of doping levels,the reasons for p-type doping difficulty,and the breakthrough in research advancements for improving the p-type doping of β-Ga_(2)O_(3).Finally,the relevant studies on the β-Ga_(2)O_(3)p-n homojunction and heterojunction devices are briefly reviewed.It requires further exploration to realize p-type doping of bulk-phase β-Ga_(2)O_(3)through complex-defect regulation,non-equilibrium dynamics,solid solution,and combining these schemes.The device performances of p-n homojunction and heterojunction also need further optimization.

关 键 词：β-Ga_(2)O_(3) p型导电 电子结构 受主能级 固溶 P-N结 

分 类 号：O474[理学—半导体物理] O475[理学—物理] O78