氧化镓雪崩光电探测器的研究进展  

Research Progress of Gallium Oxide Avalanche Photodetectors

作　　者：邵双尧 杨烁[1] 冯华钰[1] 贾志泰[2] 陶绪堂[2] SHAO Shuangyao;YANG Shuo;FENG Huayu;JIA Zhitai;TAO Xutang(School of Integrated Circuits,Shandong University,Jinan 250101,China;State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)

机构地区：[1]山东大学集成电路学院,济南250101 [2]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2025年第2期276-289,共14页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62304118,51932004,11804191)。

摘　　要：微弱紫外光的探测在导弹跟踪、火焰警告、安全通信、环境监测和其他关键应用中备受关注。雪崩光电探测器(APD)具有轻便、低功耗、高量子效率和单片集成等优点,是紫外探测领域的重要研究方向。近年来,宽禁带和超宽禁带半导体材料因其禁带宽度大、电子饱和漂移速度高、击穿场强高、热导率高和化学稳定性好等性能,被视为紫外APD设计的理想材料。从现有报道来看,相比于GaN和SiC材料,Ga_(2)O_(3)具有更大的禁带宽度、更高的击穿场强、更高的巴利加优值和更短的吸收截止边等突出优点,是一类值得关注的新材料。Ga_(2)O_(3)基APD以超宽带隙、高击穿电场、可控增益、优异热稳定性等优势,具有高响应度和高内部增益等性能,正在成为该领域的热点。本文综述了Ga_(2)O_(3)基APD的研究进展,分别对APD的器件结构、性能、发展历程与研究改进等进行介绍。The detection of weak ultraviolet light has garnered significant attention for critical applications such as missile tracking,flame warning,secure communication,and environmental monitoring.Avalanche photodetectors(APDs)are a major research direction for UV detection due to their lightweight,low power consumption,high quantum efficiency,and monolithic integration.In recent years,wide bandgap and ultra-wide bandgap semiconductor materials have been regarded as ideal materials for APD design due to their large bandgap,high electron saturation drift velocity,high breakdown field strength,high thermal conductivity,and good chemical stability.Among the reported materials,Ga_(2)O_(3)stands out as a new material of interest due to its larger bandgap,higher breakdown field strength,higher Baliga’s figure-of-merit,and shorter absorption cutoff edge.Ga_(2)O_(3)-based APDs,with advantages such as an ultra-wide bandgap,high breakdown electric field,controllable gain,and excellent thermal stability,exhibit high responsivity and internal gain,making them a hot topic in this field.This paper reviews the research progress of Ga_(2)O_(3)-based APDs,introducing the device structure,performance,development history,and research improvements of Ga_(2)O_(3)APDs.

关 键 词：雪崩光电探测器 紫外探测 宽禁带半导体 氧化镓 雪崩增益 

分 类 号：TN23[电子电信—物理电子学]