超宽带隙氧化镓功率器件热管理的研究进展  

Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices

作　　者：谢银飞 何阳 刘伟业 徐文慧 游天桂[2] 欧欣[2] 郭怀新[3] 孙华锐 XIE Yinfei;HE Yang;LIU Weiye;XU Wenhui;YOU Tiangui;OU Xin;GUO Huaixin;SUN Huarui(Ministry of Industry and Information Technology Key Laboratory of Micro-nano Optoelectronic Information System,Harbin Institute of Technology,Shenzhen,Shenzhen 518055,China;National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 211106,China)

机构地区：[1]哈尔滨工业大学(深圳),微纳光电信息系统理论与技术工业和信息化部重点实验室,深圳518055 [2]中国科学院上海微系统与信息技术研究所,集成电路材料全国重点实验室,上海200050 [3]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京211106

出　　处：《人工晶体学报》2025年第2期290-311,共22页Journal of Synthetic Crystals

基　　金：集成电路材料全国重点实验室开放课题(SKLIC-K2024-04);广东省科技创新青年拔尖人才项目(2021TQ06C953);深圳市基础研究面上项目(JCYJ20190806142614541)。

摘　　要：氧化镓的低热导率是其功率器件发展的最大瓶颈,使其在高功率密度下产热时面临高效散热的巨大挑战。因此,开发全新的热管理和封装技术迫在眉睫。通过材料、器件和封装多层面的热管理来缓解自热引发的性能与可靠性问题成为关键。本文综述了超宽带隙(UWBG)氧化镓(β-Ga_(2)O_(3))功率器件的热管理,针对相关挑战、潜在解决方案和研究机遇提出了观点。论文首先介绍了超宽带隙氧化镓的特性及其在电子器件领域的重要性,详细阐述了热管理在氧化镓器件中的关键意义。随后,从不同的热管理技术方面,包括衬底相关技术和结侧热管理技术等进行深入探讨,并分析了热管理对氧化镓器件电学性能的影响。最后,对氧化镓器件热管理的未来发展趋势进行展望,提出了“材料-器件-封装”电热协同设计、近结异质集成和新型外部封装等多维度的热管理策略,旨在唤起相关研究,加快超宽带隙氧化镓功率器件的开发和产业化进程。The low thermal conductivity of ultrawide bandgap(UWBG)gallium oxide(β-Ga_(2)O_(3))is the most significant bottleneck restricting the development of its power devices,posing a huge challenge for efficient heat dissipation under high-power density conditions.Therefore,developing new thermal management and packaging technologies is extremely urgent.It is crucial to alleviate the performance and reliability issues caused by self-heating through thermal management at the material,device,and packaging levels.This paper provides a timely review of the state of the art in thermal management of UWBG β-Ga_(2)O_(3)power devices,discussing related challenges,potential solutions,and research opportunities.The paper firstly introduces the characteristics of UWBG β-Ga_(2)O_(3)and its significance in electronic devices,and elaborates on the crucial firstly importance of thermal management in β-Ga_(2)O_(3)devices.Then,various thermal management techniques,including substrate-related methods and junction-side thermal management techniques,are thoroughly examined,and their impact on the electrical properties of β-Ga_(2)O_(3)devices is analyzed.Finally,the future development trends of thermal management for UWBG β-Ga_(2)O_(3)devices are prospected.Multi-dimensional thermal management strategies are proposed,focusing on“material-device-packaging”electrothermal collaborative design,near junction heterogeneous integration,and novel external packaging,aiming to arouse relevant research and accelerate the development and industrialization process of UWBG β-Ga_(2)O_(3)power devices.

关 键 词：热管理 超宽带隙 氧化镓 材料-器件-封装 结侧散热 高导热率衬底集成 电热协同设计 

分 类 号：TN386.1[电子电信—物理电子学]