脉冲激光沉积α相氧化镓薄膜及其日盲光电探测器  

α-Phase Gallium Oxide Films and Their Solar Blind Photodetectors Based on Pulsed Laser Deposition

作　　者：丁子舰 颜世琪 徐希凡 辛倩[1] DING Zijian;YAN Shiqi;XU Xifan;XIN Qian(School of Integrated Circuits,Shandong University,Jinan 250100,China)

机构地区：[1]山东大学集成电路学院,济南250100

出　　处：《人工晶体学报》2025年第2期329-336,共8页Journal of Synthetic Crystals

摘　　要：本文采用脉冲激光沉积(PLD)技术,在m面蓝宝石衬底上外延生长了高质量亚稳态α相氧化镓(α-Ga_(2)O_(3))薄膜,结合X射线衍射和扫描电子显微镜等表征手段,研究了不同生长温度和不同氧分压对薄膜形貌及结晶性的影响。基于优化条件下生长的异质外延α-Ga_(2)O_(3)薄膜,制备了金属-半导体-金属(MSM)结构的日盲紫外光电探测器。由于薄膜较好的结晶质量和较少的缺陷,该探测器在254 nm日盲紫外光照射下表现出良好的光电响应,5 V偏压下具有10^(-6)A的光电流及10^(-10)A的暗电流,光暗电流比可达104,最大响应度达到36.7 A/W,最大外量子效率为1.79×10^(4)%,最大探测率为2.45×10^(14)Jones。In this paper,high quality metastable α-phase gallium oxide(α-Ga_(2)O_(3))films were epitaxial grown on m surface sapphire substrate by pulsed laser deposition(PLD)technique.The effects of different growth temperature and oxygen partial pressure on the morphology and crystallinity of the films were studied by X-ray diffraction and scanning electron microscopy.Based on the heteroepitaxial α-Ga_(2)O_(3)films grown under optimized conditions,a metal-semiconductor-metal(MSM)solar blind UV photodetector was fabricated.Due to the good crystal quality and few defects of the film,the device demonstrates high performances under 254 nm illumination.The device has 10^(-6) A photo current and 10^(-10) A dark current at 5 V bias,achieving a photodark current ratio of 10^(4).The maximum responsivity is 36.7 A/W,the maximum external quantum efficiency is 1.79×10^(4)%,and the maximum detectivity is 2.45×10^(14) Jones.

关 键 词：脉冲激光沉积 α相氧化镓 生长温度 氧分压 金属-半导体-金属 日盲光电探测器 

分 类 号：TN36[电子电信—物理电子学] O78[理学—晶体学] TN304.055