Rapid-response,low-detection-limit,positive-negative air pressure sensing:GaN chips integrated with hydrophobic PDMS films  

作　　者：Sizhe Gui Binlu Yu Yumeng Luo Liang Chen Kwai Hei Li 

机构地区：[1]School of Microelectronics,Southern University of Science and Technology,Shenzhen 518055,China [2]Foshan Electrical and Lighting Company Ltd.,Foshan 528000,China

出　　处：《Microsystems & Nanoengineering》2024年第6期55-63,共9页微系统与纳米工程(英文)

基　　金：financial support from the National Natural Science Foundation of China(12074170);the Shenzhen Fundamental Research Program under Grant JCYJ20220530113201003.

摘　　要：Despite the importance of positive and negative pressure sensing in numerous domains,the availability of a single sensing unit adept at handling this dual task remains highly limited.This study introduces a compact optical device capable of swiftly and precisely detecting positive and negative pressures ranging from−35 kPa to 35 kPa.The GaN chip,which serves as a core component of the device,is monolithically integrated with light-emitting and light-detecting elements.By combining a deformable PDMS film coated with a hydrophobic layer,the chip can respond to changes in optical reflectance induced by pressure fluctuations.The integrated sensing device has low detection limits of 4.3 Pa and−7.8 Pa and fast response times of 0.14 s and 0.22 s for positive and negative pressure variations,respectively.The device also demonstrates adaptability in capturing distinct human breathing patterns.The proposed device,characterized by its compactness,responsiveness,and ease of operation,holds promise for a variety of pressure-sensing applications.

关 键 词：PDMS POSITIVE LIMIT 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN304[自动化与计算机技术—控制科学与工程]