Tb^(3+),Pr^(3+)共掺AlN薄膜的结构与发光特性  

Structure and Luminescence Properties in Tb^(3+)+and Pr^(3+)Doped AlN Films

作　　者：孟河辰 罗璇 王晓丹[1] 徐达 束正栋 曾雄辉[2] 高晓冬 郑树楠[2] 毛红敏[1] MENG Hechen;LUO Xuan;WANG Xiaodan;XU Da;SHU Zhengdong;ZENG Xionghui;GAO Xiaodong;ZHENG Shunan;MAO Hongmin(Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions,School of Mathematics and Physics,Suzhou University of Science and Technology,Suzhou 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]苏州科技大学物理科学与技术学院,江苏省高校低碳能源高效转化与利用重点实验室,苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123

出　　处：《光子学报》2025年第2期209-217,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.61974158,61306004);江苏省自然科学基金(Nos.BK20191456,BK20221263);江苏省“十四五”光学工程重点学科项目(No.2021135);江苏省研究生科研创新计划项目(No.KYCX22_3266)。

摘　　要：通过离子注入法,将Tb^(3+),Pr^(3+)共掺入了AlN薄膜。利用Raman光谱、高分辨薄膜X射线衍射和阴极荧光光谱等进行了结构和发光性质的表征。系统分析了Pr^(3+)的剂量变化对样品的结构、发光性能的影响。研究发现在Tb^(3+)剂量保持一定的情况下,Pr^(3+)的注入会导致晶格内部压应力增大,随着Pr^(3+)注入剂量的增大,晶体内部部分点缺陷发生复合,压应力得到部分释放。阴极荧光光谱显示,随着Pr^(3+)剂量的增加,Tb^(3+)发射强度与Pr^(3+)发射强度呈现出不同的变化趋势。进一步分析表明,存在Tb^(3+)至Pr^(3+)的共振能量传递:^(5)D_(4)[Tb^(3+)]+^(3)H_(5)[Pr^(3+)]→^(7)F_(5)[Tb^(3+)]+^(3)P_(1)[Pr^(3+)]。随着Pr^(3+)剂量的增加,色度坐标从(0.2682,0.3050)变化到(0.2937,0.3207),发光颜色由蓝绿色向黄绿色转变,色温由7336 K增至10260 K。证明通过改变Tb离子与Pr离子注入剂量比可有效实现发光颜色和色温的调控。Wide bandgap semiconductors,such as AlN,can effectively suppress the temperature quenching effect and expand the spectral range due to their large band gap width.Through the doping of rare earth ions,it is hoped that the excellent optical and magnetic properties of rare earth ions and the good electrical properties of AlN can be integrated.Single-doped and co-doped wide-bandgap materials with different rare earth ions have bright application prospects and high commercial value in many fields such as photoelectric detection and lighting display.Doped rare earth ions usually form a variety of light-emitting centers under the action of defects,and the properties of different light-emitting centers are different,and the complex defect environment also plays an important role in the luminescence of rare earth ions.However,the luminescence intensity of rare earth ions doped with nitride needs to be improved,and the interaction of rare earth ions after co-doping is not clear.In this study,ion implantation was employed to co-dope Tb^(3+)+and Pr^(3+)into AlN thin films grown on sapphire by metal-organic chemical vapor deposition method and annealed at 1000℃under normal pressure for 2 h under NH_(3)atmosphere.During ion implantation,the beam is tilted approximately 10°relative to the normal of the AlN thin film(0002)surface,and the accelerating voltage is 200 keV.In order to characterize the stress changes of the annealed samples with different injection doses,HRXRD and Raman spectroscopy were performed on the samples.Its luminescence performance was measured by a Mono CL^(3+)cathode fluorescence spectrometer mounted on a Quanta400FEG field emission scanning electron microscope.The influence of varying Pr^(3+)doses on the structural integrity and luminescence behavior of the samples was systematically investigated.The sample and parabolic mirror remain in the same position throughout the test.The height of the parabolic mirror and the working distance during the test also remain constant.The instrument's acceleration vo

关 键 词：氮化铝 宽禁带半导体 阴极荧光 离子注入掺杂 能量传递 

分 类 号：O472[理学—半导体物理]