基于TCAD的阶梯源VDMOSFET单粒子烧毁的研究  

TCAD study of single-event effects for the 4H-SiC VDMOSFET with step source

作　　者：项君 王颖 于成浩 XIANG Jun;WANG Ying;YU Chenghao(School of Electronic Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018

出　　处：《杭州电子科技大学学报(自然科学版)》2025年第1期11-18,共8页Journal of Hangzhou Dianzi University:Natural Sciences

基　　金：国家自然科学基金重大科研仪器研制项目(62027814)。

摘　　要：通过二维数值仿真工具给出了加固前后1.7 kV碳化硅(4H-SiC)功率VDMOSFET单粒子烧毁(SEB)的仿真结果。研究结果表明,与传统的五缓冲层的VDMOSFET(FB-VDMOSFET)相比,改进后的VDMOSFET在高线性能量密度(linear energy transfer, LET)值范围内获得了更好的抗单粒子烧毁性能。同时,加固后VDMOSFET的导通电阻在电流扩展层的作用下比传统结构更低。此外,JFET区集成的PN结使结构在击穿电压下的峰值电场从3.66 MV/cm减小到2.94 MV/cm。当漏源电压为1 400 V和LET值为0.5 pC/μm时,FB-VDMOSFET已经烧毁,改进的VDMOSFET由于阶梯源极金属电极接触和集成的PN结降低了碰撞电离,最高晶格温度降为2 070 K。该加固结构可用于航空工业。This work presents 2-D numerical simulation results of Single-Event Burnout(SEB)for hardened 1.7 kV 4H-silicon carbide(SiC)power VDMOSFET.Research results prove that,compared with the conventional VDMOSFET with five-buffer layers(FB-VDMOSFET),the modified VDMOSFET has achieved better SEB performance under high Liner Energy Transfer(LET)value range.After reinforcement,the on-resistance of the VDMOSFET is lower under the action of the current spreading layer compared to the traditional structure.In addition,the integrated PN junction in the JFET region reduces the peak electric field under breakdown voltage from 3.66 MV/cm to 2.94 MV/cm.When the drain-source voltage(V DS)is 1400V and the Linear Energy Transfer(LET)value is 0.5 pC/μm,the FB-VDMOSFET has burned out,while the improved VDMOSFET,due to the stepped source metal electrode contact and integrated PN junction,reduces collision ionization,lowering the maximum lattice temperature to 2070 K.This reinforced structure can be used in the aerospace industry.

关 键 词：单粒子烧毁 集成二极管 高可靠性 线性能量密度 

分 类 号：TN386[电子电信—物理电子学]