立式LPCVD设备的设计  

Design of Vertical LPCVD Equipment

作　　者：陈庆广 樊坤 赵瓛 黄志海 郑红应 CHEN Qingguang;FAN Kun;ZHAO Huan;HUANG Zhihai;ZHENG Hongying(The 48th Research Institute of CETC,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,长沙410111

出　　处：《电子工艺技术》2025年第2期45-48,共4页Electronics Process Technology

摘　　要：针对传统的卧式炉特点,从目前8~12英寸90 nm到28 nm制程的工艺需求出发,提出了一种立式LPCVD设备设计方案。设备对标国际主流应用装备,结合主流FAB产线大尺寸晶圆、高温度均匀性、颗粒污染控制、全自动控制的需求,进行了设备的针对性设计。产线验证结果表明,设备各项关键技术指标均满足工艺要求。Based on the characteristics of traditional horizontal furnaces,starting from requirements of the current 8~12 inch 90 nm to 28 nm processes,a design scheme for vertical LPCVD equipment is proposed.The equipment is benchmarked against international mainstream applied equipment,and targeted designs have been carried out by combining the requirements of mainstream FAB production lines for large-size wafers,high temperature uniformity,particle contamination control and full-automatic control.The verification results of the production line show that all key technical indicators of the equipment meet the process requirements.

关 键 词：立式LPCVD 颗粒 金属污染 膜厚 

分 类 号：TN302[电子电信—物理电子学]