基于激光剥离的SiC晶锭电阻率的在线检测平台  

Online Resistivity Detecting Platform of SiC Ingot Based on Laser Lift-off

作　　者：李晓燕 张志耀 邢夏斌 段云森 LI Xiaoyan;ZHANG Zhiyao;XING Xiabin;DUAN Yunsen(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2025年第2期49-51,共3页Electronics Process Technology

摘　　要：SiC作为第三代半导体材料,生产成本高,所以要求SiC晶锭切出尽可能多的晶片,就对切割工艺提出更高的要求。但是,SiC晶锭不可避免会有“小面”,这将影响晶锭到晶片激光剥离的良率及效率。为此,研究用检测晶锭表面电阻率的方法,把小面区域检测出来,以便精准施加激光能量,提高激光剥离的成品率及效率,实现激光剥离设备的智能化、自动化。As a third-generation semiconductor material,SiC has high costs,and it is expected to cut as many wafers as possible from SiC ingot,so higher requirements are placed on the cutting process.However,SiC ingots inevitably have facets,which will affect the yield and efficiency of laser Lift-off from the SiC ingot to the wafer.Therefore,the method of detecting the surface resistivity of the ingot is studied to detect the facets,in order to accurately apply laser energy and improve the yield and efficiency of laser lift-off,achieve the intelligence and automation of laser lift-off equipment.

关 键 词：激光剥离 晶锭电阻率 小面 

分 类 号：TN305[电子电信—物理电子学]