LPCVD制备二氧化硅薄膜工艺中防颗粒污染技术  

Technology for Preventing Particle Contamination in LPCVD Preparation of SiO_(2)Thin Films

作　　者：樊坤 黄志海 王理正 王志伟 苏子懿 FAN Kun;HUANG Zhihai;WANG Lizheng;WANG Zhiwei;SU Ziyi(The 48th Research Institute of CETC,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,长沙410111

出　　处：《电子工艺技术》2025年第2期52-55,共4页Electronics Process Technology

摘　　要：二氧化硅(SiO_(2))薄膜制备作为集成电路制造工艺中重要的一个步骤,在芯片的制造过程中具有多种用途,但易受颗粒污染造成产品不良。对采用TEOS源LPCVD法沉积SiO_(2)膜颗粒污染的方法进行了探索,设计了一种用于防颗粒污染的机构,该机构主要包括微环境系统和温度控制系统,重点介绍了立式LPCVD设备工艺颗粒来源、微环境系统和温度控制系统结构组成,以及微环境系统和温度控制系统的应用效果。SiO_(2)film preparation,as an important step in the integrated circuit manufacturing process,has multiple uses in the fabrication of chips,but is susceptible to particle resulting in defective products.The aspects of particle of SiO_(2)film precipitated by LPCVD method using TEOS source are explored.A mechanism for anti-particle is designed,which mainly includes micro-environmental system and temperature control system.The focus is on introducing the process particle source of the vertical LPCVD equipment,the microenvironmental system and the structural composition of the temperature control system,as well as the effect of the micro-environmental system and the application of temperature control system.

关 键 词：半导体 CVD 温度控制 微环境 颗粒污染 二氧化硅 

分 类 号：TN305[电子电信—物理电子学]