射频等离子体去胶及表面清洗工艺技术研究  

Research on the Technology of RF Plasma Degluing and Surface Cleaning

作　　者：田文娟 贺晓彬[2] 焦斌斌[2] TIAN Wenjuan;HE Xiaobin;JIAO Binbin(Beijing Dashihe Technology Co.,Ltd.,Beijing 102401,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100020,China)

机构地区：[1]北京大石河科技有限公司,北京102401 [2]中国科学院微电子研究所,北京100020

出　　处：《真空》2025年第2期56-61,共6页Vacuum

摘　　要：简要介绍了等离子去胶和清洗的化学、物理变化过程;系统分析了决定去胶效果和去胶均匀性的因素,并给出了相应的方案和最优参数匹配原理,通过实验研究了不同工艺条件下微米级及纳米级Ar-F光刻胶的最优去除工艺参数;探讨了等离子体清洗反应原理、工艺过程,以及等离子体清洗在材料表面改性方面的应用。The chemical and physical changes of plasma degluing and cleaning are briefly introduced.The factors that determine the degluing effect and uniformity are analyzed systematically,and the corresponding scheme and the optimal parameter matching principle are given.The optimal removal process parameters of micro and nano scale Ar-F photoresist under different process conditions were studied through experiments,and several groups of process parameters with good degluing effect were obtained.The reaction principle and process of plasma cleaning,and the application of plasma cleaning in surface modification of materials are discussed.

关 键 词：等离子体 干法去胶 去胶速率 去胶均匀性 表面改性 

分 类 号：TB79[一般工业技术—真空技术]