Low‐temperature chemical vapor deposition growth of 2D materials  

作　　者：Minting Lei Peijian Wang Xiaofeng Ke Jun Xie Min Yue Mei Zhao Kenan Zhang Youqing Dong Quanlong Xu Chao Zou Shun Wang Lijie Zhang 

机构地区：[1]Key Laboratory of Carbon Materials of Zhejiang Province,College of Chemistry and Materials Engineering,Wenzhou University,Wenzhou,China [2]Zhejiang Engineering Research Center for Electrochemical Energy Materials and Devices,Institute of New Materials&Industry Technology,Wenzhou University,Wenzhou,China

出　　处：《Electron》2025年第1期104-129,共26页电子(英文)

基　　金：Key Programs for Science and Technology Innovation of Wenzhou,Grant/Award Number:ZG2022037;National Natural Science Foundation of China,Grant/Award Numbers:51902061,52072272,52331009,62304157。

摘　　要：Two‐dimensional(2D)materials have atomic thickness,and thickness‐dependent electronic transport,optical and thermal properties,high-lighting great promise applications in future semiconductor devices.Chemical vapor deposition(CVD)is considered as an industry‐oriented method for macro‐synthesis of 2D materials.In conventional CVD,high temperatures are required for the synthesis of high‐quality large‐size 2D materials,which is incompatible with of back‐end‐of‐line of the complementary metal oxide semiconductor(CMOS)techniques.There-fore,low‐temperature synthesis of 2D materials is of critical importance for the advancement toward practical applications of 2D materials with the CMOS technologies.In this review,we focus on strategies for the low‐temperature growth of 2D materials,including the use of low‐melting‐point precursors,metal‐organic CVD,plasma‐enhanced CVD,van der Waals‐substrate vapor phase epitaxy,tellurium‐assisted CVD,salt‐assisted CVD,etc.,with discussions of their reaction mechanisms,ap-plications,associated advantages,and limitations.We also provide an outlook and perspectives of future low‐temperature chemical vapor deposition growth of 2D materials.

关 键 词：2D materials CMOS techniques CVD low-temperature growth 

分 类 号：TG1[金属学及工艺—金属学]