基于动态复合寿命的LED多量子阱载流子分布计算  

Calculation of carrier distribution in LED multiple quantum wells based on dynamic recombination lifetime

作　　者：冯晓雨 肖秧 房永恒 田海涛[1] 刘宏伟[1,2] 张东炎 FENG Xiaoyu;XIAO Yang;FANG Yongheng;TIAN Haitao;LIU Hongwei;ZHANG Dongyan(School of Electronics and Information Engineering,Tiangong University,Tianjin 300387,China;Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems,Tiangong University,Tianjin 300387,China;Tianjin Sanan Optoelectronics Co.,Ltd.,Tianjin 300392,China)

机构地区：[1]天津工业大学电子与信息工程学院,天津300387 [2]天津工业大学天津市光电检测技术与系统重点实验室,天津300387 [3]天津三安光电有限公司,天津300392

出　　处：《电子元件与材料》2025年第1期24-32,共9页Electronic Components And Materials

基　　金：天津市科技局资助项目(23YDTPJC00370);天津市光电检测技术与系统重点实验室资助项目(2023LOTDS003);天津市普通高等学校本科教学改革与质量建设研究计划(B231005812)。

摘　　要：为了得到多量子阱(MQWs)发光二极管(LED)在正向偏压下更精确的载流子寿命和浓度分布,研究了在动态复合寿命条件下LED的MQWs载流子复合特性和分布特性。研究工作中,使用金属有机气相沉积(MOCVD)设备生长了AlGaInP/GaInP MQWs LED材料并加工为红光LED器件。利用时间分辨光谱测试了LED的载流子复合寿命。结合材料和器件结构参数建立了MQWs LED载流子计算模型,该模型使用循环迭代的方法求解MQWs区域的载流子寿命方程和载流子连续性方程。分析结果验证了载流子寿命受多种载流子复合机制的影响,且在不同正向电压和不同载流子浓度下的寿命是动态变化的。使用载流子动态寿命结果计算的LED MQWs区域的载流子浓度出现了随偏置电压先升高后降低的趋势,出现这一现象的主要原因为载流子在高注入电压条件下复合寿命快速降低。动态载流子寿命模型计算得到的量子阱载流子浓度与使用固定寿命值计算的载流子浓度结果对比表明,本文工作中的动态寿命的载流子分布计算结果更加符合实际器件的测试结果。In order to obtain a more accurate carrier lifetime and concentration distribution of multi-quantum well(MQWs)light-emitting diodes(LED)under positive bias,the composite characteristics and distribution characteristics of LED multiquantum wells under dynamic composite lifetime conditions were studied.In the study,AlGaInP/GaInP MQWs materials were grown using metal organic chemical vapor deposition(MOCVD)equipment and processed into red light LED devices.The carrier recombination lifetime of the LED was tested using time-resolved spectroscopy.A carrier calculation model for MQWs LED was established by combining the material and device structural parameters,and the carrier lifetime equation and carrier continuity equation in the MQWs region were solved using an iterative method.The results confirmed that the carrier lifetime was affected by multiple carrier recombination mechanisms,and the lifetime varied dynamically under different forward voltages and carrier concentrations.The carrier concentration distribution in the MQWs region of the LED,calculated based on dynamic carrier lifetime results,showed the carrier concentration increased first and then decreased with increasing bias voltage.The main reason was the rapid decrease in carrier recombination lifetime under high injection voltage conditions.By comparing the MQWs carrier concentration results obtained from dynamic carrier lifetime model calculations and the results obtained using fixed lifetime values,it turned out that the carrier distribution calculations based on dynamic lifetime in this study were more closely matched with the experimental results of the actual device.

关 键 词：发光二极管 多量子阱 载流子寿命 AlGaInP/GaInP 

分 类 号：TN312.8[电子电信—物理电子学]