p型MgZnOS透明导电薄膜及其p-n结型自驱动紫外光电探测器研究  

p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors

作　　者：郭紫曼 汪洋[1] 刘洋 张腾 陈剑 卢寅梅 何云斌[1] GUO Ziman;WANG Yang;LIU Yang;ZHANG Teng;CHEN Jian;LU Yinmei;HE Yunbin(School of Materials Science&Engineering,Hubei University,Wuhan 430062,China;College of Intelligent Systems Science and Engineering,Hubei Minzu University,Enshi 445000,China)

机构地区：[1]湖北大学材料科学与工程学院,湖北武汉430062 [2]湖北民族大学智能科学与工程学院,湖北恩施445000

出　　处：《发光学报》2025年第3期373-382,共10页Chinese Journal of Luminescence

基　　金：国家自然科学基金(62274057,11975093,52202132);湖北省国际科技合作项目(2022EHB023);湖北省自然科学基金(2022CFB758)。

摘　　要：针对纯ZnO半导体的p型掺杂难题,提出采用阴(S^(2-))阳(Mg^(2+))离子复合取代、协同调控ZnO合金电子能带结构基础上,进行N受主掺杂的新思路,并采用脉冲激光沉积法成功制备了N掺杂p型透明导电MgZnOS薄膜。通过X射线衍射、透射光谱、霍尔效应、X射线光电子能谱和二次离子质谱测试分析了薄膜的晶体结构、光电学性质及化学组分。实验结果表明,制备的MgZnOS∶N薄膜为六角纤锌矿结构,呈现c轴择优取向生长。薄膜在紫外-可见-近红外波段的透射率超过80%,且Mg掺杂可明显拓宽ZnO合金薄膜的光学带隙。所制备p型导电薄膜中的Mg和S含量分别为9%和25%,空穴浓度为2.02×10^(19) cm^(-3),霍尔迁移率为0.25 cm^(2)/(V∙s),电阻率为1.24Ω∙cm。在成功制备p型MgZnOS∶N薄膜的基础上,设计并制备了新型p-MgZnOS∶N/n-ZnO准同质p-n结型紫外光电探测器。器件呈现典型的二极管整流特性(开启电压约为1.21 V),且在0 V偏压下表现出稳定的自驱动紫外光响应,峰值响应度2.26 mA/W(波长为350 nm)。经分析,认为上述自驱动光响应来源于p-n结内建电场对光生载流子的有效分离和传输。本研究可为ZnO的p型掺杂研究提供有价值的参考,对开发高性能全ZnO基光电子器件具有重要意义。In this study,to tackle the challenge of p-type doping of pure ZnO semiconductor,we proposed utilization of co-substitution strategies involving anionic(S^(2-))and cationic(Mg^(2+))ions,leveraging their synergistic effects to modify the electronic band structure of ZnO alloy to facilitate the activation of nitrogen acceptors.By applying pulsed laser deposition technique,we successfully fabricated N-doped p-type transparent conductive MgZnOS thin films.The crystal structures,op-toelectronic properties,and chemical compositions of the films were systematically analyzed using X-ray diffraction,transmit-tance spectroscopy,Hall-effect measurements,X-ray photoelectron spectroscopy,and secondary ion mass spectrometry.The experimental results indicate that the prepared MgZnOS∶N films possess a hexagonal wurtzite structure with preferential c-axis orientation.The deposited films exhibit a transmittance exceeding 80%in the ultraviolet-visible-near-infrared spectral region,and Mg doping significantly broadens the optical bandgap of the ZnO alloy films.The Mg and S contents in the prepared p-type conductive films are 9%and 25%,respectively,and the films have a hole concentration of 2.02×10^(19) cm^(-3),a Hall mobility of 0.25 cm^(2)/(V·s),and a resistivity of 1.24Ω·cm.Based on the successful fabrication of p-type MgZnOS∶N film,we designed and constructed a novel p-MgZnOS∶N/n-ZnO quasi-homogeneous p-n junction ultraviolet photodetector.The fabricated device exhibits typical diode rectification characteristics(with a turn-on voltage of approximately 1.21 V)and demonstrates stable ultraviolet photoresponse at 0 V bias,with a peak responsivity of 2.26 mA/W(at wavelength of 350 nm).The self-driven photoresponse is attributed to the effective separation and transport of photogenerated carriers by the built-in electric field of the p-n junction.This study offers valuable insights into the p-type doping of ZnO and holds substan-tial significance for the advancement of high-performance all-ZnO-based optoelectronic devices.

关 键 词：脉冲激光沉积 P型掺杂 MgZnOS P-N结 

分 类 号：O469[理学—凝聚态物理]