从单晶MgZnO到非晶Ga_(2)O_(3):深紫外光电探测器的发展和选择  

Deep UV Detection:from Single-crystalline MgZnO to Amorphous Ga_(2)O_(3)

作　　者：梁会力 朱锐[1] 杜小龙 梅增霞 LIANG Huii;ZHU Rui;DU Xiaoong;MEI Zengxia(Songshan Lake Materials Laboratory,Dongguan 523808,China;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]松山湖材料实验室,广东东莞523808 [2]中国科学院物理研究所,北京100190

出　　处：《发光学报》2025年第3期399-411,共13页Chinese Journal of Luminescence

基　　金：国家自然科学基金(62174113,12174275,62404146);广东省基础与应用基础研究基金(2023A1515140094,2023A1515110730,2019B1515120057)。

摘　　要：宽带隙半导体在研制无滤光片紧凑型日盲紫外探测器方面具有极大的发展潜力。本文结合本团队在分子束外延MgZnO单晶薄膜和磁控溅射非晶Ga_(2)O_(3)薄膜以及相应日盲紫外探测器的研究经验,综述了以MgZnO和非晶Ga_(2)O_(3)为代表的宽带隙氧化物半导体深紫外探测器研究进展,发现非晶Ga_(2)O_(3)薄膜拥有不输于单晶薄膜的深紫外响应特性。众多研究结果表明,氧空位相关缺陷对器件性能起着至关重要的作用,对其进行合理调控可有效提升器件性能。此外,与氧空位缺陷相伴的持续光电导效应为开发深紫外光电突触器件提供了新的研究视角。最后,针对上述研究中存在的问题进行剖析总结,期望进一步推动宽带隙氧化物半导体材料,尤其非晶Ga_(2)O_(3)材料在未来深紫外探测方面的产业应用。Wide bandgap semiconductors have great potential for the development of compact solar-blind ultravio-let detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films.It has been found that the photoresponse performance of a-Ga_(2)O_(3) thin film is comparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy(VO)defects play a crucial role in device performance.Based on the effective modulation of VO defects,high performance solar-blind ultraviolet photodetectors can be suc-cessfully achieved.In addition,the persistent photoconductivity effect,which is usually accompanied by the pres-ence of VO defects in oxide materials,provides a new perspective for the development of optoelectronic synaptic de-vices in deep ultraviolet range.Finally,a brief discussion is provided concerning the above research progress as well as some unsolved issues.These advancements are expected to promote the industrial application of wide bandgap ox-ide semiconductor materials,especially a-Ga_(2)O_(3),in deep ultraviolet detection in the future.

关 键 词：日盲紫外 光电探测器 镁锌氧 氧化镓 非晶 

分 类 号：O482.31[理学—固体物理] TN366[理学—物理]