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作 者:姚建军 孙振东 郝勇 Yao Jian-jun;Sun Zhen-Dong;Hao Yong(Jinan Jingheng Electronics Co.,Ltd.,Jinan 250300,Shandong Province,China)
机构地区:[1]济南晶恒电子有限责任公司,山东济南250300
出 处:《科学与信息化》2025年第5期140-142,147,共4页Technology and Information
摘 要:本文研究了在某大电流肖特基二极管科研项目研制过程中出现的器件抗浪涌电流能力不达标的问题。研究发现,器件因浪涌电流失效的原因主要是浪涌过程中瞬间局部热量的集中导致的芯片键合点下方出现熔融。围绕“降低器件在浪涌电流作用期间芯片键合点处的温度累积”建立了研制方案,提高了金属陶瓷表贴器件的抗浪涌电流能力。This paper investigates the issue of inadequate surge current capability encountered during the development of a high-current Schottky diode research project.The study reveals that the primary cause of device failure due to surge current is the localized heat concentration during the surge process,leading to melting beneath the chip bonding points.A development plan was established focusing on reducing temperature accumulation at the chip bonding points during surge current events.This approach significantly enhances the surge current capability of metal-ceramic surface-mount devices.
分 类 号:TN3[电子电信—物理电子学]
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