Advancements in two-dimensional Ti_(3)C_(2)MXene interfaced semiconductors for room temperature NO_(2)gas sensing:A review  

作　　者：Adem Sreedhar Parnapalle Ravi Jin-Seo Noh 

机构地区：[1]Department of Physics,Gachon University,1342 Seongnamdaero,Sujeong-gu,Seongnam-si,Gyeonggi-do 461-701,South Korea

出　　处：《Journal of Materials Science & Technology》2024年第36期237-254,共18页材料科学技术(英文版)

基　　金：supported by the National Research Foundation of Korea(NRF)Grant funded by the Korea government(MSIT)(No.2019R1A2C1008746).

摘　　要：Nowadays,there is a growing global demand for high-performance room temperature gas sensing de-vices.In this context,we aim to explore the advancements in two-dimensional(2D)Ti_(3)C_(2)MXene role for toxic NO_(2)gas sensing at room temperature.The distinctive advantages of 2D Ti_(3)C_(2)MXene,including high electrical conductivity,ample surface area,surface termination groups,and layer structure have garnered significant attention towards NO_(2)gas adsorption.Further,the compatible regularity of Ti_(3)C_(2)MXene at the interface of various semiconductors directed the development of potential room-temperature NO_(2)gas sensing devices.Further,the leveraging gas sensing(selectivity,response,and recovery)characteristics be-come increasing attention on Ti_(3)C_(2)MXene/semiconductor interfaces than pure Ti_(3)C_(2)MXene.Elaborative control on the depletion layer through the Schottky barrier formation distinguished the room tempera-ture NO_(2)gas sensing and led to the evolution of electrophilic NO_(2)gas molecule interaction.Remarkably,the great processability of Ti_(3)C_(2)MXene/semiconductor interface is sensitive to the low detection limit(LOD)of NO_(2)gas at parts per billion(ppb)conditions.On the other hand,this review demonstrates the room temperature optoelectronic NO_(2)gas sensing capabilities of Ti_(3)C_(2)-based composites for emphasiz-ing selectivity and recovery.Interestingly,the Ti_(3)C_(2)MXene/semiconductor composite builds immunity against the atmosphere humidity and achieves stable NO_(2)gas sensing.Finally,we have provided conclu-sions and key points to advance the research on room temperature NO_(2)gas sensing of Ti_(3)C_(2)integrated semiconductors.

关 键 词：SEMICONDUCTORS 2D Ti_(3)C_(2)MXene NO_(2)gas sensing Schottky barrier Room temperature 

分 类 号：TB3[一般工业技术—材料科学与工程]