碳化硅晶圆化学机械抛光工艺优化  

Process optimization of chemical mechanical polishing for silicon carbide wafer

作　　者：李萍 张宝玉[2] LI Ping;ZHANG Baoyu(School of Automotive Engineering,Jiangsu Electronic Information Vocational College,Huai’an 223003,China;School of Intelligent Manufacturing,Jiangsu Food and Drug Vocational and Technical College,Huai’an 223003,China)

机构地区：[1]江苏电子信息职业学院汽车工程学院,江苏淮安223003 [2]江苏食品药品职业技术学院智能制造学院,江苏淮安223003

出　　处：《电镀与涂饰》2025年第3期127-132,共6页Electroplating & Finishing

基　　金：江苏省高等学校自然科学研究面上项目(20KJD510007);江苏省苏北科技专项(SZ-HA2019006)。

摘　　要：[目的]化学机械抛光(CMP)技术广泛应用于半导体制造的多个环节,是实现晶圆表面平坦化的关键步骤,而工艺参数显著影响着CMP效果。[方法]通过正交试验研究了压力、抛光盘转速、磨料粒径及抛光液pH对SiC晶圆抛光时材料去除速率和表面粗糙度的影响。[结果]当在压力400 N、抛光盘转速80 r/min、磨料粒径550 nm、pH 10的条件下抛光时,SiC晶圆Si面和C面的材料去除速率最大,分别为3.85μm/h和4.00μm/h,表面粗糙度也较小,Ra分别为0.165 nm和0.171 nm。[结论]工艺参数是影响材料化学机械抛光效果的重要因素,应合理控制,以实现晶圆表面高效率和高品质的抛光效果。[Objective]Chemical mechanical polishing(CMP)is widely used in multiple stages of semiconductor manufacturing and is a critical step in achieving wafer surface planarization,while the CMP efficiency is significantly influenced by process parameters.[Method]The effects of pressure,polishing pad speed,abrasive particle size,and slurry pH on the material removal rate and surface roughness of SiC wafer were studied by orthogonal experiments.[Result]When polished under the optimized conditions i.e.pressure 400 N,polishing pad speed 80 r/min,abrasive particle size 550 nm,and pH 10,Si-and C-face of SiC wafer had the largest material removal rates of 3.85μm/h and 4.00μm/h,respectively,as well as low surface roughness with Ra of 0.165 nm and 0.171 nm,respectively.[Conclusion]Process parameters are crucial factors affecting the efficiency of chemical mechanical polishing,and should be properly controlled to achieve high-efficiency and high-quality polishing of wafer.

关 键 词：碳化硅晶圆 化学机械抛光 材料去除速率 表面粗糙度 

分 类 号：TG175[金属学及工艺—金属表面处理]