超临界二氧化碳去除半导体制造中黏附颗粒研究  

Investigation of supercritical carbon dioxide for the removal of adherent particles in semiconductor manufacturing

作　　者：杨自鹏 于鲲鹏 李琳[1] 孙海鑫 冯桐 银建中[1] YANG Zipeng;YU Kunpeng;LI Lin;SUN Haixin;FENG Tong;YIN Jianzhong(School of Chemical Engineering,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学化工学院,辽宁大连116024

出　　处：《应用科技》2025年第1期64-70,共7页Applied Science and Technology

摘　　要：黏附颗粒的去除在半导体制造过程中至关重要。以超临界二氧化碳(supercritical carbon dioxide,scCO_(2))为清洗介质,能够去除小粒径和高纵横比结构中的黏附颗粒。本文通过建立黏附颗粒在scCO_(2)中的动力学模型,分析了其去除机制,并比较了不同条件下颗粒的受力情况。结果表明,颗粒通过滚动方式被去除。在层流模式下,颗粒的去除由驱动力和提拉力共同作用;而在湍流模式下,提拉力起主导作用。对于Cu和Au等变形较小的颗粒,范德华力在小粒径时占主导地位,而在大粒径时变形附加力占优。对于聚苯乙烯乳胶等变形较大的颗粒,变形附加力始终强于范德华力。最后,通过分析温度与压力对颗粒去除的影响,发现当温度接近scCO_(2)的临界温度且压力大于15 MPa时,颗粒的去除效果更佳。The removal of adhered particles is crucial in semiconductor manufacturing.Supercritical carbon dioxide(scCO_(2))serves as an effective cleaning medium for removing adhered particles from small particle sizes and high aspect ratio structures.This study developed a kinetic model for adhered particles in scCO_(2) to analyze their removal mechanisms and compared the forces acting on the particles under different conditions.The results indicate that particles were removed primarily through rolling motion.In laminar flow,the removal is driven by both the driving force and the lift force.While in turbulent flow,the lift force plays a dominant role.For particles with minimal deformation,such as Cu and Au,van der Waals forces dominate at smaller sizes,while the deformation-induced force becomes predominant at larger sizes.For larger deformable particles,such as polystyrene latex,the deformation-induced force always exceeds the van der Waals force.Finally,by examining the effects of temperature and pressure on particle removal,it is found that better removal efficiency is achieved when the temperature approaches the critical temperature of scCO2 and the pressure exceeds 15 MPa.

关 键 词：超临界二氧化碳 黏附 颗粒 去除机制 清洗 半导体制造 范德华力 变形附加力 

分 类 号：TN305.97[电子电信—物理电子学]