基于低温铜烧结技术的大功率碳化硅模块电热性能表征  

Characterization of Electrothermal Properties of High-Power Silicon Carbide Modules Based on Low-Temperature Copper Sintering Technology

作　　者：闫海东 蒙业惠 刘昀粲 刘朝辉 YAN Haidong;MENG Yehui;LIU Yuncan;LIU Chaohui(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China;School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin 541004,China;Beijing National New Energy Vehicle Technology Innovation Center Co.,Ltd.,Beijing 100176,China)

机构地区：[1]浙江大学电气工程学院,杭州310027 [2]桂林电子科技大学机电工程学院,广西桂林541004 [3]北京国家新能源汽车技术创新中心有限公司,北京100176

出　　处：《电子与封装》2025年第3期78-83,共6页Electronics & Packaging

基　　金：国家重点研发计划(2021YFB3602303)。

摘　　要：SiC器件的比导通电阻仅有Si基器件的1/5,在高频、高温、高功率密度的车规级封装领域展现出更大优势,但SiC器件的高通流密度对其散热设计提出了更高要求。虽然高热导率、低工艺温度、高服役温度的银烧结有助于优化功率模块的热管理,但存在烧结银成本过高与电迁移问题。针对上述问题提出了一种针对SiC器件的全铜烧结互连方法,高质量铜互连层的剪切强度超过130 MPa。与传统功率模块相比,全铜烧结功率模块的结-壳热阻降低了6.12 K/kW(12.47%),动、静态测试结果表明,模块具有良好的电学性能。The specific on-resistance of SiC devices is only 1/5 of that of Si-based devices,showing greater advantages in the field of automotive grade packaging with high frequency,high temperature,and high power density.However,the high flow density of SiC devices puts forward higher requirements for their heat dissipation design.Although sintered silver with high thermal conductivity,low process temperature and high service temperature is helpful to optimize the thermal management of power modules,there are problems of high cost and electromigration of sintered silver.An all-copper sintering interconnect method for SiC devices has been proposed to address the above issues,and the shear strength of the high-quality copper interconnect layer exceeds 130 MPa.Compared with the traditional power module,the junction-case thermal resistance of the all-copper sintered power module is reduced by 6.12 K/kW(12.47%).The dynamic and static test results show that the module has good electrical property.

关 键 词：功率模块封装 铜烧结 铜线键合 

分 类 号：TN305.94[电子电信—物理电子学]