原子层沉积氢掺杂氧化铟(InO_(x):H)薄膜的制备与性能研究  

Preparation and Characterization of Hydrogen-doped Indium Oxide(InO_(x))Thin Films by Atomic Layer Deposition

作　　者：徐梁格 渠怀志 滕祥青 杨磊[3] 张善勇 朱嘉琦[1,2] XU Liangge;QU Huaizhi;TENG Xiangqing;YANG Lei;ZHANG Sam;ZHU Jiaqi(School of Astronautics,Harbin Institute of Technology,Harbin 150001,China;Zhengzhou Research Institute,Harbin Institute of Technology,Zhengzhou 450000,China;Center of Analysis Measurement,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学航天学院,哈尔滨150001 [2]哈尔滨工业大学郑州研究院,郑州450000 [3]哈尔滨工业大学分析与测试中心,哈尔滨150001

出　　处：《真空与低温》2025年第2期133-139,共7页Vacuum and Cryogenics

基　　金：国家自然科学基金重点项目(52032004)。

摘　　要：红外透明导电材料能够同时具备优异的红外透过率与良好的电学性能,通过调控薄膜中的载流子迁移率与载流子浓度,可以兼顾良好的电学性能与高红外透过率。通过对沉积工艺参数的优化,系统分析了InO_(x):H薄膜的生长速率、微观结构以及光电性能。当沉积温度为100℃时,由于反应不完全,薄膜生长速率较慢并呈现无定形结构;此时载流子迁移率仅为30.18 cm^(2)/(V·s),但在波长4μm处的透过率可达80%。随着沉积温度升高,生长速率逐渐稳定于约0.1 nm/周期,薄膜由非晶态转变为结晶态,载流子迁移率显著提升,最高达到64.05 cm^(2)/(V·s),同时载流子浓度相应降低。此外,研究发现InCp/(O_(2)+H_(2)O)的脉冲时间比例及InCp脉冲时间对薄膜电学与光学特性的影响相对有限。继续增加沉积周期数后,载流子迁移率可突破80 cm^(2)/(V·s),然而此时光学性能显著下降,4μm处的透过率为39.5%。Infrared transparent conductive materials that are capable of simultaneously achieving high infrared transmittance and superior electrical performance are of significant interest for advanced optoelectronic applications.This study systematically investigates the growth kinetics,microstructural evolution,and optoelectronic properties of hydrogenated indium oxide(InO_(x):H)thin films deposited via atomic layer deposition(ALD),focusing on optimizing carrier mobility and concentration to balance electrical conductivity and infrared transparency.By modulating deposition parameters,it is demonstrated that substrate temperature critically governs the film growth rate,crystallinity,and carrier dynamics.At a low deposition temperature of 100℃,incomplete precursor reactions result in a sluggish growth rate(0.06 nm/cycle)and amorphous structures.These films exhibit a carrier mobility of 30.18 cm^(2)/(V·s)and an infrared transmittance of 80%at 4μm wavelength,which can be attributed to reduced free carrier absorption due to low carrier concentration(3.2×10^(20) cm^(−3)).Elevating the deposition temperature stabilizes the growth rate at approximately 0.1 nm/cycle and triggers a phase transition from amorphous to crystalline states.Consequently,carrier mobility surges to 64.05 cm^(2)/(V·s),while carrier concentration decreases to 1.8×10^(20) cm^(−3),maintaining a high transmittance of 75%at 4μm.Notably,the pulse time ratio of InCp/(O_(2)+H_(2)O)and InCp duration exhibit negligible influence on optical-electrical performance,suggesting that thermal energy dominates crystallinity and defect suppression.Further increasing deposition cycles enhances carrier mobility beyond 80 cm^(2)/(V·s)but drastically degrades optical performance(transmittance drops to 39.5%at 4μm),emphasizing the inherent trade-off between electrical and infrared-transparent properties.These findings highlight the pivotal role of temperature-dependent crystallinity in tailoring carrier transport and infrared absorption,providing a pathway to engine

关 键 词：原子层沉积 氢掺杂氧化铟 迁移率 红外透明导电 

分 类 号：TB79[一般工业技术—真空技术]