衬底温度对热丝CVD法沉积氧化钨的影响研究  

STUDY ON EFFECT OF SUBSTRATE TEMPERATURE ON TUNGSTEN OXIDE FILMS BY HOT-WIRE CVD DEPOSITION

作　　者：张旭[1] 郭丛 陈涛[1] 俞健 唐水花[1] Zhang Xu;Guo Cong;Chen Tao;Yu Jian;Tang Shuihua(School of New Energy and Materials,Southwest Petroleum University,Chengdu 610500,China)

机构地区：[1]西南石油大学新能源与材料学院,成都610500

出　　处：《太阳能学报》2025年第3期335-341,共7页Acta Energiae Solaris Sinica

基　　金：教育部“春晖计划”项目(HZKY-20220555);四川省科技计划项目(2023ZYD0163,2023YFG0098)。

摘　　要：通过热丝化学气相沉积法制备氧化钨(WOx)薄膜,并将其应用于无掺杂异质结太阳电池。研究表明,衬底温度在沉积过程中起着重要作用,衬底温度从室温升高到200℃,WOx薄膜的表面颗粒尺寸减小,薄膜更加致密;功函数先升高再迅速下降;透过率在150℃以内无明显变化,继续升高温度后迅速降低。通过取代p型非晶硅层,将其应用于无掺杂硅异质结太阳电池中作为空穴选择接触层。在衬底温度为100℃的条件下,利用高透明的WOx层,获得最佳转换效率为14.63%的太阳电池。Tungsten oxide(WOx)thin films were prepared via hot-wire chemical vapor deposition and applied to dopant-free silicon heterojunction solar cells.It was found that substrate temperature played a crucial role during the deposition process.As the substrate temperature increased from room temperature to 200℃,the surface particle size of the WOx thin film decreased,and the film became denser.The work function first increased and then rapidly decreased.The transmittance showed no significant change when the temperature lower than 150℃,but rapidly decreased as the further increased temperature.By replacing the p-type amorphous silicon layer,it was applied to dopant-free silicon heterojunction solar cells as a hole-selective contact layer.Under the condition of a substrate temperature of 100℃,the highest conversion efficiency of 14.63%was achieved at the substrate temperature of 100℃.This work demonstrated the feasibility and great potential of preparing WOx by hot-wire chemical vapor deposition for high-efficiency dopant-free silicon heterojunction solar cells.

关 键 词：晶体硅太阳电池 钨化合物 薄膜 化学气相沉积 温度 衬底 

分 类 号：TM914.4[电气工程—电力电子与电力传动]