TC-SAW SiO_(2)温补层性能研究  

Study on the Performance of SiO_(2)Thermal Compensation Layer for Temperature-Compensated Surface Acoustic Wave

作　　者：贺贞 李燕[1] 田本朗 马晋毅[1] 肖强 梁柳洪 HE Zhen;LI Yan;TIAN Benlang;MA Jinyi;XIAO Qiang;LIANG Liuhong(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2025年第1期88-91,共4页Piezoelectrics & Acoustooptics

摘　　要：为制备高性能的TC-SAW SiO_(2)温补层,分别采用电子束蒸发镀膜和反应磁控溅射制备SiO_(2)薄膜,研究两种制备工艺对SiO_(2)薄膜致密性、表面粗糙度及弹性模量的影响。采用扫描电子显微镜、原子力显微镜、X线衍射仪对SiO_(2)薄膜的形貌和晶体结构进行分析。采用椭偏仪测试薄膜折射率及腐蚀后的膜厚变化量,并通过纳米压痕仪测量计算薄膜的硬度和弹性模量。结果表明,反应磁控溅射制备的SiO_(2)薄膜更致密、薄膜表面粗糙度更小、弹性模量更大。采用反应磁控溅射制备的SiO_(2)薄膜作为TC-SAW温补层,可以获得频率温度系数为-8.6×10^(-6)/℃的TC-SAW器件。To prepare high-performance SiO_(2)thermal compensation layers for temperature-compensated surface acoustic wave(TC-SAW),SiO_(2)thin films were prepared using electron beam evaporation coating and reactive magnetron sputtering.The effects of the two preparation processes on the density,surface roughness,and elastic modulus of SiO_(2)thin films were studied.The morphology and crystal structure of SiO_(2)films were analyzed using scanning electron microscopy,atomic force microscopy,and X-ray diffraction.The refractive index and thickness changes of the thin film after corrosion were measured using an ellipsometer and the hardness and elastic modulus of the thin film were calculated using a nano-tracer.The results show that SiO_(2)prepared by reactive magnetron sputtering has a denser film,lower surface roughness,and higher elastic modulus.A TC-SAW device with a frequency temperature coefficient of-8.6×10^(-6)/℃was obtained using a SiO_(2)thin film prepared by reactive magnetron sputtering.

关 键 词：TC-SAW SiO_(2)温补层 反应磁控溅射 

分 类 号：TN384[电子电信—物理电子学] TN65