金属卤素钙钛矿场效管各向异性迁移率TCAD仿真  

TCAD Simulation of Anisotropic Mobility in Metal Halide Perovskite Field-Effect Transistors

作　　者：杨帆 周贤中 YANG Fan;ZHOU Xianzhong(School of Information Engineering,Guangdong University of Technology,Guangzhou Guangdong 510006,China)

机构地区：[1]广东工业大学信息工程学院,广东广州510006

出　　处：《电子器件》2025年第1期15-19,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金青年科学基金项目(61704032)。

摘　　要：利用TCAD软件对低成本、易处理的金属卤素钙钛矿材料CsPbBr_(3)制造的场效应管进行仿真,探讨其各向异性迁移率对器件性能的影响。场效应管是集成电路制造中重要的元器件之一,其材料选择和物理参数直接决定了器件性能和成本。在常温下,CsPbBr_(3)材料在[100]晶向与[010]晶向上具有相似的电学特性,而在[001]晶向上则有所不同。这一结果为该材料在场效应管制造中的潜在应用提供了参考依据。TCAD software is used to simulate field-effect transistors(FETs)fabricated from low-cost and easy-to-process metal halide perovskite material CsPbBr_(3) and the influence of its anisotropic mobility on device performance is investigated.FETs are important com-ponents in integrated circuit fabrication,and their material selection and physical parameters direct determine the device performance and cost.It is found that at room temperature,CsPbBr_(3) material has similar electrical characteristics in[100]and[010]crystal direc-tions,while it differs in[001]direction.This result provides a reference for the potential application of this material in FET fabrication.

关 键 词：金属卤素钙钛矿 各向异性迁移率 场效应管 

分 类 号：TN386[电子电信—物理电子学]