磷化铟晶片双面研磨及腐蚀影响因素研究  

Study on the influencing factors of double-sided grinding and corrosion of InP wafers

作　　者：吕欣泽 刘汉保 柳廷龙 王怀伟 赵茂旭 赵庆东 唐开华 王茺[1] LYU Xinze;LIU Hanbao;LIU Tinglong;WANG Huaiwei;ZHAO Maoxu;ZHAO Qingdong;TANG Kaihua;WANG Chong(School of Materials and Energy,Yunnan University,Kunming 650500,Yunnan,China;Yunnan Xinyao Semiconductor Materials Co.,Ltd.,Kunming 650503,Yunnan,China)

机构地区：[1]云南大学材料与能源学院,云南昆明650500 [2]云南鑫耀半导体材料有限公司,云南昆明650503

出　　处：《云南大学学报(自然科学版)》2025年第2期318-325,共8页Journal of Yunnan University(Natural Sciences Edition)

基　　金：云南省重点研发计划(202202AH080009,202202AB080019)。

摘　　要：晶片研磨的主要目的是去除切割片损伤层和一定程度上修复其表面形貌,便于后续抛光加工,以及减小后续机械抛光的损耗量,达到节约成本的目标.研磨片的腐蚀工艺主要是为了去除部分研磨造成的损伤层并且得到适合外延的均匀橄榄状凹坑的背面形貌.文章系统研究了研磨加工参数(包括下定盘转速、研磨压力、研磨液配比、研磨粉粒径等)对磷化铟晶片双面研磨粗糙度、研磨效率和损伤层深度的影响规律,并获得了磷化铟晶片双面研磨的优选工艺:下定盘转速优选4~8 r/min,压力优选150~180 N,研磨粉粒径优选4μm<D_(50%)<12μm.还探索了不同腐蚀时间和腐蚀液温度对晶片表面形貌的影响,找到了较佳的腐蚀工艺.研究结果为磷化铟切割片的高效批量化研磨处理提供了一种参考.The main purpose of grinding is to remove this damaged layer and partially repair the surfacemorphology of the cut wafer,making it easier for subsequent polishing processes and reducing the amount of lossduring mechanical polishing,thus achieving cost savings.The purpose of the etching process is mainly to removepart of the damage caused by grinding and expose scratches generated during the grinding process.This studysystematically investigates the impact of grinding process parameters(including lower plate rotation speed,grinding pressure,grinding fluid ratio,grinding powder particle size,etc.)on the roughness,grinding efficiency,and depth of the damaged layer of double-sided grinding of indium phosphide wafers,and optimal process ofdouble-sided grinding of indium phosphide wafers was obtained:the speed of the lower set plate was optimized tobe 4-8 r/min,the pressure was optimized to be 150-180 N,and the particle size of the grinding powder was 4μm<D_(50%)<12μm.It also explores the effects of different etching times and etching solution temperatures on thesurface morphology of the wafers,and identifies an optimal etching process.This work provides a reference for theefficient batch grinding treatment of indium phosphide cutting wafers.

关 键 词：磷化铟晶片 双面研磨 腐蚀 

分 类 号：TB492[一般工业技术]