Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors  

作　　者：Guan-Qiao Sang Ren-Jie Jiang Yan-Zhao Wei Qing-Kun Li Mei-He Zhang Jia-Xin Yao Yi-Hong Lu Lei Cao Jun-Feng Li Xu-Lei Qin Qing-Zhu Zhang Hua-Xiang Yin 

机构地区：[1]Key Laboratory of Microelectronics Devices and Integrated Technology,Integrated Circuit Advanced Process Center(ICAC),Institute of Microelectronics,Chinese Academy of Sciences,Beijing,100029,China [2]School of Physics,Changchun University of Science and Technology,Changchun,130013,China [3]University of Chinese Academy of Sciences,Beijing,100049,China [4]School of Information and Electronics,Beijing Institute of Technology,Beijing,100081,China

出　　处：《Rare Metals》2024年第12期6516-6524,共9页稀有金属(英文版)

基　　金：financially supported by the Strategic Pilot Project of the Chinese Academy of Sciences-Class A(No.XDA0330302);the National Natural Science Foundation of China(Nos.62374183 and 62304247);the 2021 Jilin Province Science and Technology Department Key R&D Projects(No.20210201031GX)。

摘　　要：In order to effectively remove the residual Ge atoms at the surface of channel and improve the interfacial characteristic of gate-all-around(GAA)Si nanosheet field effect transistors,a low-temperature atomic-level trimming approach using ammonia peroxide water mixture(APM)solution treatment followed by diluted hydrofluoric acid is proposed and carried out.The capacitor samples with SiGe epitaxy layer,similar thermal budget and channel release process were fabricated using advanced high-k/metal-gate.An 83%reduction in surface roughness at atomic level is obtained by increasing APM treatment time.Moreover,there are 99.45% reduction in the interface state density(D_(it))and 96.8%leakage reduction in current density(J_(g))after APM treatment,indicating a promising method for future GAA NSFET performance optimization.

关 键 词：GATE-ALL-AROUND NANOSHEET TRIMMING Ammonia peroxide water mixture Low temperature Interface state density 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]