GATE-ALL-AROUND

作品数：16被引量：3H指数：1
导出分析报告
相关领域：电子电信更多>>
相关期刊：《Science China(Information Sciences)》《Tsinghua Science and Technology》《Nano-Micro Letters》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划高等学校学科创新引智计划广东省自然科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-10
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
High‑Performance Gate‑All‑Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels
《Nano-Micro Letters》2025年第7期42-52,共11页Wei Liao Wentao Qian Junyang An Lei Liang Zhiyan Hu Junzhuan Wang Linwei Yu 
financial support received from the National Key Research Program of China under granted No.92164201;the National Natural Science Foundation of China for Distinguished Young Scholars No.62325403;the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China under No.61934004.
Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its appl...
关键词：In-plane solid-liquid-solid Ultrathin silicon nanowires Gate-all-around field-effect transistors(GAA-FETs) 
Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors
《Rare Metals》2024年第12期6516-6524,共9页Guan-Qiao Sang Ren-Jie Jiang Yan-Zhao Wei Qing-Kun Li Mei-He Zhang Jia-Xin Yao Yi-Hong Lu Lei Cao Jun-Feng Li Xu-Lei Qin Qing-Zhu Zhang Hua-Xiang Yin 
financially supported by the Strategic Pilot Project of the Chinese Academy of Sciences-Class A(No.XDA0330302);the National Natural Science Foundation of China(Nos.62374183 and 62304247);the 2021 Jilin Province Science and Technology Department Key R&D Projects(No.20210201031GX)。
In order to effectively remove the residual Ge atoms at the surface of channel and improve the interfacial characteristic of gate-all-around(GAA)Si nanosheet field effect transistors,a low-temperature atomic-level tri...
关键词：GATE-ALL-AROUND NANOSHEET TRIMMING Ammonia peroxide water mixture Low temperature Interface state density 
Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs
《Fundamental Research》2024年第5期1306-1313,共8页Baokang Peng Yanxin Jiao Haotian Zhong Zhao Rong Zirui Wang Ying Xiao Waisum Wong Lining Zhang Runsheng Wang Ru Huang 
supported in part by the Natural Science Foundation of China(62125401 and 62074006);the major scientific instruments and equipments development grant(61927901);the Shenzhen Fundamental Research Program(GXWD20200827114656001).
In this work,a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around(GAA)MOSFET is presented.Energy quantization with sub-band formation along the radiu...
关键词：Gate-all-around FET Compact model Quantum mechanical confinement Nanosheet FET Nanowire FET Sub-band energy 
Design and investigation of doping-less gate-all-around TFET with Mg_(2)Si source material for low power and enhanced performance applications
《Chinese Physics B》2023年第10期615-624,共10页Pranav Agarwal Sankalp Rai Rakshit Y.A Varun Mishra 
Metal–oxide–semiconductor field-effect transistor(MOSFET)faces the major problem of being unable to achieve a subthreshold swing(SS)below 60 mV/dec.As device dimensions continue to reduce and the demand for high swi...
关键词：SUBTHRESHOLD Mg_(2)Si HETEROJUNCTION charge plasma gate-all-around(GAA) 
Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study
《Chinese Physics B》2023年第9期436-442,共7页魏伟杰 吕伟锋 韩颖 张彩云 谌登科 
supported by the Zhejiang Provincial Natural Science Foundation of China(Grant No.LY22F040001);the National Natural Science Foundation of China(Grant No.62071160);the Graduate Scientific Research Foundation of Hangzhou Dianzi University。
The steep sub-threshold swing of a tunneling field-effect transistor(TFET)makes it one of the best candidates for lowpower nanometer devices.However,the low driving capability of TFETs prevents their application in in...
关键词：negative capacitance(NC) gate-all-around(GAA) silicon-germanium heterojunction gate-tosource overlap(SOL) 
A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors
《Chinese Physics B》2023年第6期660-665,共6页芦宾 马鑫 王大为 柴国强 董林鹏 苗渊浩 
Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332);the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028)。
Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transi...
关键词：tunneling field effect transistor relaxation time approximation non-quasi-static non-quasi-static 
Advanced Process and Electron Device Technology被引量：1
《Tsinghua Science and Technology》2022年第3期534-558,共25页Dan Zhang Xiaojing Su Hao Chang Hao Xu Xiaolei Wang Xiaobin He Junjie Li Fei Zhao Qide Yao Yanna Luo Xueli Ma Hong Yang Yongliang Li Zhenhua Wu Yajuan Su Tao Yang Yayi Wei Anyan Du Huilong Zhu Junfeng Li Huaxiang Yin Jun Luo Tianchun Ye Wenwu Wang 
the support from the members of Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics,Chinese Academy of Sciences;supported in part by the National Key Project of Science and Technology of China(No.2017ZX02315001-002)。
This article reviews advanced process and electron device technology of integrated circuits,including recent featuring progress and potential solutions for future development.In 5 years,for pushing the performance of ...
关键词：advanced process gate-all-around devices three-dimensional(3D)integration high-mobility channel integrated circuits 
Analysis on Three-Dimensional Gate Edge Roughness of Gate-All-Around Devices
《Chinese Journal of Electronics》2021年第5期861-865,共5页SUN Shuang LI Ming ZHANG Baotong LI Xiaokang CAI Qifeng LI Haixia BI Ran XU Xiaoyan HUANG Ru 
the National Key Research and Development Plan(No.2016YFA0200504);the National Natural Science Foundation of China(No.61927901)。
As the physical size of metal-oxide-semiconductor field effect transistor approaches the end of scaling down,the effect of process-induced variations such as gate edge roughness on device performance cannot be neglect...
关键词：Gate-all-around devices Trapezoidal gate profile Gate edge roughness Effective channel length Threshold voltage variation 
BSIM-CMG Compact Model for IC CAD: from FinFET to Gate-All-Around FET Technology被引量：1
《Journal of Microelectronic Manufacturing》2020年第4期2-11,共10页Avirup Dasgupta Chenming Hu 
We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate(CMG)device.This is an industry standard model which has been used extensively for FinFETs IC design and simulation,and has now been ...
关键词：GATE-ALL-AROUND GAAFET FINFET BSIM BSIM-CMG Compact model Quantum NANOSHEET 3D TRANSISTOR 
Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors被引量：1
《Science China(Information Sciences)》2020年第10期284-286,共3页Xiaoqiao DONG Ming LI Wanrong ZHANG Yuancheng YANG Gong CHEN Shuang SUN Jianing WANG Xiaoyan XU Xia AN 
supported in part by National Key Research and Development Plan(Grant No.2016YFA0200504);National Science and Technology Major Project(Grant No.2017ZX02315001-004);Program of National Natural Science Foundation of China(Grant Nos.61421005,61774012,61574010);Beijing Innovation Center for Future Chips Foundation(Grant No.KYJJ2016008);the 111 Project(Grant No.B18001)。
Dear editor,With the development of VLSI technology,gateall-around(GAA)silicon nano wire transistor(SNWT)has emerged as one of the most potential candidates for ultimately scaled CMOS devices at the end of the technol...
关键词：GAA TRANSISTOR asymmetrical 
全选清除导出
共2页<12>
检索报告 对象比较 聚类工具 使用帮助 返回顶部