制程温度对Sr_(2)SiO_(4):Eu^(3+)荧光粉原子与电子结构的影响  

Effect of processing temperature on the atomic and electronic structures of Sr_(2)SiO_(4):Eu^(3+) phosphors

作　　者：郑世燕[1] 廖凌鑫 庄琼 袁怡圃[1] ZHENG Shi-yan;LIAO Ling-xin;ZHUANG Qiong;YUAN Yi-pu(College of Physics and Information Engineering,Quanzhou Normal University,Quanzhou 362000,China)

机构地区：[1]泉州师范学院物理与信息工程学院,福建泉州362000

出　　处：《陕西科技大学学报》2025年第2期156-162,共7页Journal of Shaanxi University of Science & Technology

基　　金：福建省自然科学基金项目(2022J011103,2024J01789);泉州师范学院博士科研启动基金项目(H21014)。

摘　　要：由于Eu^(3+)的掺杂,使得Sr_(2)SiO_(4):Eu^(3+)样品具有发光的特性.本文主要探讨利用溶胶凝胶法制备Sr_(2)SiO_(4):Eu^(3+)荧光粉样品时,制程温度对样品原子与电子结构的影响.在原子结构的研究上,先利用X射线衍射进行测量,再使用一般结构分析系统软件对X射线衍射测量结果进行拟合分析;在电子结构的研究上,则是利用以同步辐射为光源的X射线吸收近边结构能谱进行分析.期许能从原子与电子结构的角度,获得制程温度与Sr_(2)SiO_(4):Eu^(3+)荧光粉样品发光强度间的关联性.实验结果表明,该样品主要以低温相存在.当制程温度升高时,Eu^(3+)在样品中的掺杂位置会受影响,体现在不对称率I的改变;虽然此举并不影响样品的发光波长,但会让样品的发光强度增强,在此过程中也伴随着O 2p-Eu 4f/5d混合未占据态态密度的改变.Sr_(2) SiO_(4):Eu^(3+)sample has its PL properties due to Eu^(3+)doping.The effects of processing temperature on the atomic and electronic structures in samples prepared by the sol-gel method are mainly discussed.In terms of the atomic structure,XRD is first used to measure,GSAS software is followed by a fitting analysis of the XRD results.For the electronic structure,XANES with synchrotron radiation is used for the analysis.It is expected that the correlation between the processing temperature and the PL intensity can be obtained from the perspective of atomic and electronic structures.The experimental results show that the samples mainly exist in low-temperature phase.As the processing temperature increases,Eu^(3+)doping position in the samples will be influenced,which is reflected in the change of the asymmetry ratio I.Although this doesn′t affect the PL wavelength of the samples,it will still enhance the PL intensity of the samples.And this process is also accompanied by a change in the density of the unoccupied states of the O_(2) p-Eu 4 f/5 d hybridization.

关 键 词：Sr_(2)SiO_(4):Eu^(3+) 光致发光光谱 X射线衍射 一般结构分析系统 X射线吸收近边结构 

分 类 号：O472.3[理学—半导体物理]