Mg掺杂氧化镓研究进展  

Review on Mg Doping of Ga_(2)O_(3)

作　　者：孙汝军 张晶辉[1,2] 李一帆 郝跃[1,2] 张进成[1,2] SUN Rujun;ZHANG Jinghui;LI Yifan;HAO Yue;ZHANG Jincheng(National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,Xidian University,Xi’an 710071,China;Faculty of Integrated Circuit,Xidian University,Xi’an 710071,China)

机构地区：[1]西安电子科技大学,宽禁带半导体器件与集成技术全国重点实验室,西安710071 [2]西安电子科技大学集成电路学部,西安710071

出　　处：《人工晶体学报》2025年第3期361-370,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62204186);陕西省三秦英才引进计划青年项目;国家级抗辐照应用技术创新中心(KFZC2022020401);中央高校基本科研业务费专项资金(ZYTS23027)。

摘　　要：氧化镓(Ga_(2)O_(3))材料具有超宽禁带宽度、高击穿电场强度,在电力电子器件和光电器件领域具有巨大应用前景。虽然氧化镓难以实现p型导电,但仍可以利用p型掺杂调控能带实现电学性能设计。实验上已验证的氧化镓p型掺杂杂质有Mg、Fe、N、Zn、Cu、Ni、Co等,其中,Mg掺杂由于形成能最低、能级位置最靠近价带顶,以及掺入方法多而被大量研究。本文聚焦Mg掺杂,首先对Mg掺杂氧化镓的受主能级的理论计算认识和实验测试结果进行综述;接着总结了Mg掺杂氧化镓半绝缘单晶和外延层的各种掺杂方法、掺杂浓度,以及在热处理中Mg扩散等关键问题;最后指出关于Mg掺入、激活及扩散机制还值得进一步研究,并对其未来进行了展望。Gallium oxide(Ga_(2)O_(3))possesses an ultra-wide bandgap and high breakdown electric field,making it promising for applications in power electronic devices and optoelectronic devices.Although Ga_(2)O_(3)lacks p-type conductivity,we can still utilize p-type doping to control and design electrical properties by energy band engineering.The p-type dopants for gallium oxide that have been experimentally verified include Mg,Fe,N,Zn,Cu,Ni,Co,etc.Among the p-type dopants of Ga_(2)O_(3),Mg is extensively studied due to its lowest formation energy,closest energy level to the valence band top,and multiple doping methods.This paper focuses on Mg dopingβ-Ga_(2)O_(3).Firstly,the theoretical computational understanding and experimental test results of the acceptor levels of Mg-doped Ga_(2)O_(3)are reviewed.Secondly,various doping methods,doping concentrations,and key issues such as Mg diffusion during thermal treatment for semi-insulating single crystals and epitaxial layers of Mg-dopedβ-Ga_(2)O_(3)are summarized.Finally,it is pointed out that further investigations are needed on the mechanisms of Mg incorporation,activation and diffusion.

关 键 词：氧化镓 Mg掺杂 半绝缘衬底 电流阻挡层 电学性能 

分 类 号：O483[理学—固体物理] O78[理学—物理]