基于反射特征辨识的IGBT焊料层老化状态评估  

Aging status evaluation of IGBT solder layer based on reflection feature identification

作　　者：王为介 刘畅 陈钰洁 成庶[3] 向超群[3] 袁炜钰 赵洪利 WANG Weijie;LIU Chang;CHEN Yujie;CHENG Shu;XIANG Chaoqun;YUAN Weiyu;ZHAO Hongli(Locomotive&Car Research Institute,China Academy of Railway Sciences Co.,Ltd.,Beijing 100081,China;Beijing Zongheng Electro-Mechanical Technology Co.,Ltd.,Beijing 100094,China;School of Traffic and Transportation Engineering,Central South University,Changsha 410075,China)

机构地区：[1]中国铁道科学研究院集团有限公司机车车辆研究所,北京100081 [2]北京纵横机电科技有限公司,北京100094 [3]中南大学交通运输工程学院,湖南长沙410075

出　　处：《铁道科学与工程学报》2025年第3期1383-1395,共13页Journal of Railway Science and Engineering

基　　金：动车组和机车牵引与控制国家重点实验室开放课题(2022YJ273)。

摘　　要：IGBT(insulated-gate bipolar transistor)作为电气化交通、新能源等领域的核心电气部件,在牵引传动、变流控制和辅助照明供电等系统中发挥着重要作用。焊料层老化是IGBT模块的典型退化形式,而作为老化状态评价指标的空洞、裂纹参数的获取却受限于模块的外部封装。为在保证监测对象完整性的前提下达到其状态评估的目的,基于传输线理论和拓展频谱时域反射(spread spectrum time domain reflectometry,SSTDR)法提出IGBT反射信号检测方案,并提出反射波解析拟合算法以实现对混叠采样信号的目标提取与特征辨识。然后在考虑焊料层退化机理的基础上构建模块芯片端等效阻抗解析模型,进而建立“信号−阻抗−焊料层”的映射关联,并以SKM50GB12T4型IGBT为例,通过开展功率循环加速老化实验,明确空洞率随焊料层老化状态的变化趋势。最后,基于信号传输和器件阻抗建模理论对各阶段老化样本开展反射信号特征辨识研究,分析信号特征参数随器件劣化进程的变化规律,为焊料层老化状态评估提供依据。研究结果表明:老化过程中检测端阻抗随空洞增长呈现出先缓慢减小(寄生电容主导),后快速增大的趋势(空洞、芯片主导),进而得到一致的反射信号特征参数变化趋势,与空洞变化规律的阻抗分析结果相符,故可基于特征参数增量属性将服役周期划分为健康、缓慢退化期、快速劣化期和故障损坏4个阶段。相较于空洞统计的评价方法,本方法借助信号反射特性间接刻画了焊料层空洞发展趋势,克服了内部参数监测方案的部分局限性。研究结果为IGBT焊料层老化状态的无损化检测与评估研究提供了新思路。The insulated-gate bipolar transistor(IGBT),as a core electrical component in fields such as electrified transportation and new energy,plays a crucial role in traction drive,converter control,and auxiliary lighting power supply system.Aging of the solder layer is a typical degradation form of IGBT modules,while the acquisition of void and crack parameters,which serve as evaluation indicators of aging status,is limited by the external encapsulation of the module,aiming to achieve its state assessment while ensuring the integrity of the monitoring object.Firstly,based on the transmission line theory and the spread spectrum time domain reflectometry(SSTDR)method,an IGBT reflection signal detection scheme was proposed.A reflection wave analysis and fitting algorithm was introduced to extract the target and identify the features of the overlapping sampled signals.Subsequently,based on the consideration of the degradation mechanism of the solder layer,an analytical model of the equivalent impedance at the module chip terminal was constructed.Moreover,a mapping correlation between“signal-impedance-solder layer”was established.Taking the SKM50GB12T4 type IGBT as an example,power cycling accelerated aging experiments were conducted to clarify the trend of void rate variation with the aging status of the solder layer.Lastly,based on signal transmission and device impedance modeling theories,a study was conducted on the identification of reflection signal characteristics for aging samples at different stages.The variation patterns of signal feature parameters with device degradation processes were analyzed,providing a basis for the assessment of solder layer aging status.The research results indicate that the detected terminal impedance during the aging process exhibits a trend of initial slow decrease(dominated by parasitic capacitance)followed by rapid increase(dominated by voids and chips growth).This consistent trend is observed in the variation of reflection signal feature parameters,which aligns with the impedance

关 键 词：芯片焊料层 空洞率 老化状态评估 拓展频谱时域反射 信号特征辨识 

分 类 号：U229[交通运输工程—道路与铁道工程]