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作 者:周聪 闫晋平 郭建成 游雨霖 杨振川[1] 高成臣[1] ZHOU Cong;YAN Jinping;GUO Jiancheng;YOU Yulin;YANG Zhenchuan;GAO Chengchen(School of Integrated Circuits,Peking University,Beijing 100091,China;Taiyuan Taihang Pressure Test Technology Co Ltd,Taiyuan 030006,China;School of Software&Microelectronics,Peking University,Beijing 100091,China)
机构地区:[1]北京大学集成电路学院,北京100091 [2]太原市太航压力测试科技有限公司,山西太原030006 [3]北京大学软件与微电子学院,北京100091
出 处:《传感器与微系统》2025年第4期128-131,136,共5页Transducer and Microsystem Technologies
基 金:国家重点研发计划资助项目(2022YFB3207000)。
摘 要:温度变化使得硅压阻式压力传感器产生零点漂移和灵敏度漂移,该漂移误差是硅压阻式压力传感误差的主要来源,也导致压阻式压力传感器上电后短时间出现上电热漂移现象,需要一定的预热时间。本文改进了实验测试平台的温控系统,提出了上电热漂移补偿算法,设计了一种具有快速上电响应能力的压阻式压力传感器,能够实现自动化的温度补偿。经测试,温度补偿后,压力传感器的示值误差在0~40℃的温度范围优于0.02%FS。找出了影响上电热漂移的关键因素,对上电后8~60 s满量程输出进行上电热漂补,将上电热漂移由0.012%FS减小到了0.0016%FS,提高了上电快速响应能力。Temperature change causes silicon piezoresistive pressure sensors to generate zero drift and sensitivity drift.Such drift errors are the main sources of errors of silicon piezoresistive pressure sensors,meanwhile,it causes piezoresistive pressure sensors to occur power-on thermal drift phenomenon in a short period after power-on and thus require a certain warm-up time.Temperature control system of the experimental test platform is improved,power-on thermal drift compensation algorithm is put forward,and a piezoresistive pressure sensor with rapid power-on response ability is designed,which can realize the automatic temperature compensation.After testing,the indication error of the pressure sensor after temperature compensation is prior to 0.02%FS within the temperature range of 0~40℃.The key factors affecting the power-on thermal drift are identified,and compensation for the power-on thermal drift of the full-scale output within 8~60 s after power-on is conducted.As a result,the power-on thermal drift is reduced from 0.012%FS to 0.0016%FS,and the rapid power-on response ability is improved.
关 键 词:MEMS压力传感器 硅压阻式 上电响应 高精度 温度补偿
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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