车用SiC-MOSFET的应用与技术发展综述  

A Review of SiC-MOSFET in Electric Vehicles:Application and Technology Development

作　　者：李尊 张政 吴毅卓 王学耀 Li Zun;Zhang Zheng;Wu Yizhuo;Wang Xueyao(Shaanxi Fast Gear Co.,Ltd.,Xi’an 710119)

机构地区：[1]陕西法士特齿轮有限责任公司,西安710119

出　　处：《汽车工程师》2025年第4期1-9,共9页Automotive Engineer

摘　　要：针对硅基绝缘栅双极型晶体管(IGBT)难以进一步满足电动汽车高功率密度、低导通损耗、高散热能力等需求的不足,综述了车用碳化硅金属氧化物半导体场效应晶体管(SiC-MOSFET)的最新研究进展。通过总结SiC-MOSFET在电动汽车牵引逆变器、DC/DC电源变换器和车载充电机(OBC)应用场景下的特点,分析了目前车用SiC-MOSFET在成本、可靠性及散热方面的技术挑战,并探讨了其在微型化、先进封装、多芯片集成和成本方面的发展趋势。In response to the difficulty of silicon-based Insulated Gate Bipolar Transistor(IGBT)in meeting the high power density,low conduction loss and high heat dissipation requirements of electric vehicles,this paper reviews the latest research progress on Silicon Carbide-Metal Oxide Semiconductor Field-Effect Transistor(SiC-MOSFET)for automotive applications.By summarizing the characteristics of SiC-MOSFET in the application scenarios of electric vehicle traction inverters,DC/DC power converters and On-Board Chargers(OBC),this paper analyzes the current technical challenges of SiCMOSFET in terms of cost,reliability as well as heat dissipation,and explores their future development trends in miniaturization,advanced packaging,multi-chip integration and cost.

关 键 词：电动汽车 碳化硅金属氧化物半导体场效应晶体管 功率半导体芯片 导通损耗 转换效率 

分 类 号：U469.72[机械工程—车辆工程]