Buck开关电源MOSFET损耗分析  

Analysis of MOSFET Power Loss in Buck Switching Power Supply

作　　者：廖波 李伟亮 赵目龙 吕佳文 杨莉 Liao Bo;Li Weiliang;Zhao Mulong;LüJiawen;Yang Li(Global R&D Center,China FAW Corporation Limited,Changchun 130013)

机构地区：[1]中国第一汽车股份有限公司研发总院,长春130013

出　　处：《汽车工程师》2025年第4期10-16,共7页Automotive Engineer

摘　　要：为实现汽车集中式域控制器高性能芯片的开关电源的功率损耗计算,分析了金属-氧化物半导体场效应晶体管(MOSFET)的导通和关断过程,对Buck型开关电源的MOSFET损耗进行理论分析及公式推导,针对开关损耗部分进行了实例计算和仿真验证。结果表明,计算结果与仿真结果趋于一致,所提出的方法可为开关电源MOSFET的选型提供参考。In order to calculate power loss of switching power supplies of high-performance chip in automotive centralized domain controller,this article analyzes the on and off processes of Metal-Oxide-Semiconductor Field Effect Transistor(MOSFET),theoretically analyzes and derives formulas for the MOSFET losses of Buck type switching power supplies,and focuses on example calculation and simulation verification of the switch losses.The calculation and simulation results tend to be consistent,which can be used as a reference for hardware design engineers when selecting switch power MOSFETs.

关 键 词：开关电源 MOSFET损耗 BUCK 导通损耗 开关损耗 

分 类 号：U463.67[机械工程—车辆工程] U463[交通运输工程—载运工具运用工程]