基于BSIM-CMG紧凑模型的不同沟道外壳厚度n型核/壳NSFET的SPICE建模  

SPICE Modeling of n-Type Core/Shell NSFETs with Different Channel Shell Thicknesses Based on BSIM-CMG Compact Model

作　　者：王悦杨 马英杰 白永林 吴佳颖 廉浩哲 唐敏 刘伟景 Wang Yueyang;Ma Yingjie;Bai Yonglin;Wu Jiaying;Lian Haozhe;Tang Min;Liu Weijing(College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China;Semiconductor Manufacturing International Corporation,Shanghai 310000,China)

机构地区：[1]上海电力大学电子与信息工程学院,上海200090 [2]中芯国际集成电路制造有限公司,上海310000

出　　处：《半导体技术》2025年第4期339-344,共6页Semiconductor Technology

摘　　要：对一种新型的Si/Ge-核/壳纳米片场效应晶体管(NSFET)进行了SPICE建模。使用TCAD仿真获得器件特性数据,结合伯克利短沟道绝缘栅场效应晶体管公共多栅(BSIM-CMG)紧凑模型,完成不同沟道外壳厚度的n型Si/Ge-核/壳NSFET的直流特性建模。通过分析核壳结构沟道的材料与结构设计特点及其导通原理,确立并修正了部分相关的物理参数,准确地描述了沟道外壳厚度改变引起的器件特性变化,完成核/壳NSFET的SPICE模型构建及验证。结果表明,单器件的直流特性参数的平均提取误差小于3%,验证误差小于5%。所建模型可以准确描述不同沟道外壳厚度的n型核/壳NSFET的器件特性,为核/壳NSFET的研发及仿真应用提供参考。SPICE modeling has been performed for a novel Si/Ge-core/shell nanosheet field effect transistor(NSFET).Device characteristics data were obtained using TCAD simulation,and combined with the Berkley short-channel insulated gate field-effect transistor model-common multi-gate(BSIM-CMG)compact model,the DC characteristics modeling of the n-type Si/Ge-core/shell NSFETs with different channel shell thicknesses was completed.By analyzing the material and structural design characteristics of the core-shell structure channel and its conduction principle,some relevant physical parameters were established and corrected,the changes of device characteristics induced by channel shell thickness variation were accurately described,and the SPICE modeling and verification of the Si/Ge-core/shell NSFET were completed.The results show that the average extraction error of the DC characteristic parameters of a single device is less than 3%,and the verification error is less than 5%.The proposed model can accurately describe the device characteristics of n-type core/shell NSFETs with different channel shell thicknesses,which provides reference for the development and simulation applications of core/shell NSFETs.

关 键 词：核壳结构 纳米片场效应晶体管(NSFET) TCAD 伯克利短沟道绝缘栅场效应晶体管公共多栅(BSIM-CMG)紧凑模型 SPICE建模 

分 类 号：TN386[电子电信—物理电子学]